NTBG020N120SC1 The On Semiconductor NTBG020N120SC1 is an N-Channel SiC FET with a 1200V drain-to-source voltage and 98A continuous drain current (Tc). It features a low Rds On of 28mOhm at 60A, 20V.
Mfr Part #:

NTBG020N120SC1

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTBG020N120SC1 is an N-Channel SiC FET with a 1200V drain-to-source voltage and 98A continuous drain current (Tc). It features a low Rds On of 28mOhm at 60A, 20V.
✓ Total Stock: 6,033 pcs
$ Price Range: $0.99

NTBG020N120SC1 Available from 3 distributors

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✓ Non-Authorised
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5,027 pcs
5027 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
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6 pcs
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NTBG020N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTBG020N120SC1 Description

Short technical summary and product information.

The NTBG020N120SC1 from On Semiconductor is a high-performance N-Channel Silicon Carbide (SiC) Field-Effect Transistor (FET). It is designed for demanding applications requiring high voltage and efficient switching.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 98A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 28mOhm at 60A and 20V gate-source voltage, contributing to reduced conduction losses. With a typical gate charge (Qg) of 220 nC and low Coss capacitance, it supports high-speed switching.

 

This SiC FET operates within a junction temperature range of -55°C to 175°C. It is housed in a D2PAK-7 surface mount package, suitable for various power electronic designs.

 

Typical applications include UPS systems, DC-DC converters, and boost inverters where high efficiency and power density are critical.

NTBG020N120SC1 Quick Information

Product Type: N-Channel SiC FET
Series: NTBG020N120SC1
Canonical Name: On Semiconductor NTBG020N120SC1 N-Channel SiC FET
Subcategory: Single

NTBG020N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTBG020N120SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTBG020N120SC1 Features

  • 1200V drain-to-source voltage rating.
  • 98A continuous drain current (Tc).
  • Low 28mOhm Rds On at 60A, 20V.
  • 220 nC typical gate charge.
  • Surface mount D2PAK-7 package.

NTBG020N120SC1 Applications

  • Ideal for UPS systems.
  • Suitable for DC-DC converters.
  • Used in boost inverter designs.
  • High-efficiency power applications.

NTBG020N120SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTBG020N120SC1?

The maximum drain-to-source voltage (Vdss) is 1200V.

What is the continuous drain current rating?

The continuous drain current (Id) is 8.6A at 25°C ambient temperature and 98A at 25°C case temperature.

What is the typical on-resistance (Rds On) of this FET?

The typical on-resistance (Rds On) is 20 mOhm, and the maximum is 28mOhm at 60A, 20V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package type is the NTBG020N120SC1 supplied in?

It is supplied in a D2PAK-7 package for surface mounting.

Is this device RoHS compliant?

Yes, this device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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