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STB8N65M5 The STB8N65M5 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 650V drain-source voltage and a 7A continuous drain current.
Mfr Part #:

STB8N65M5

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STB8N65M5 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It offers a 650V drain-source voltage and a 7A continuous drain current.
✓ Total Stock: 6,020 pcs
$ Price Range: $2.56

STB8N65M5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
4,000 pcs
On Request
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,020 pcs
On Request
2020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STB8N65M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB8N65M5 Description

Short technical summary and product information.

The STB8N65M5 is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications, featuring a high drain-source voltage rating of 650V and a continuous drain current capability of 7A at case temperature.

 

Key electrical characteristics include a maximum on-resistance of 600mOhm at 3.5A and 10V gate-source voltage, and a gate charge of 15nC. The input capacitance is rated at 690pF. The device operates at a maximum junction temperature of 150°C.

 

Packaged in a surface-mount D2PAK (TO-263) package, the STB8N65M5 is suitable for various power management circuits. Its robust construction and specifications make it a reliable choice for designs requiring efficient power handling.

STB8N65M5 Quick Information

Product Type: MOSFET
Canonical Name: STB8N65M5 N-Channel MOSFET
Subcategory: N-Channel

STB8N65M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB8N65M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB8N65M5 Features

  • 650V drain-source voltage rating.
  • 7A continuous drain current capability.
  • 600mOhm maximum on-resistance.
  • Surface mount D2PAK package.
  • 150°C maximum operating temperature.

STB8N65M5 Applications

  • Power supply circuits.
  • Switch mode power supplies.
  • Motor control applications.
  • General power switching.

STB8N65M5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STB8N65M5?

The maximum drain-to-source voltage (Vdss) is 650V.

What is the continuous drain current rating?

The continuous drain current (Id) is 7A at Tc.

What is the on-resistance of the STB8N65M5?

The maximum on-resistance (Rds(on)) is 600mOhm at 3.5A and 10V gate drive.

What package does the STB8N65M5 come in?

The STB8N65M5 is available in a surface-mount D2PAK (TO-263) package.

What is the maximum operating temperature?

The maximum operating junction temperature (TJ) is 150°C.

What is the gate charge of the STB8N65M5?

The maximum gate charge (Qg) is 15nC at 10V.

What is the input capacitance?

The maximum input capacitance (Ciss) is 690pF at 100V.

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