STF6N65K3 The STMicroelectronics STF6N65K3 is an N-Channel MOSFET with a 650V drain-source voltage and a continuous drain current of 5.4A. It is supplied in a TO-220FP package.
Mfr Part #:

STF6N65K3

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STF6N65K3 is an N-Channel MOSFET with a 650V drain-source voltage and a continuous drain current of 5.4A. It is supplied in a TO-220FP package.
✓ Total Stock: 6,156 pcs
$ Price Range: $2.56

STF6N65K3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,256 pcs
4256 pcs On Request 1 On Request On Request 1432+ On Request On Request
Non-Authorised Inventory information
1,900 pcs
1900 pcs On Request 1 On Request On Request On Request On Request On Request

STF6N65K3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STF6N65K3 Description

Short technical summary and product information.

The STMicroelectronics STF6N65K3 is a single N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 5.4A at a case temperature of Tc. The MOSFET has a maximum on-resistance (Rds On) of 1.3 Ohms at 2.8A and 10V gate-source voltage.

 

With a maximum power dissipation of 30W (Tc), this device operates at temperatures up to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 35 nC at 10V and an input capacitance (Ciss) of 880 pF at 50V. The gate threshold voltage (Vgs(th)) is 4.5V at 50µA, and the maximum gate-source voltage is ±30V.

 

The STF6N65K3 is housed in a TO-220-3 Full Pack package and is designed for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles, offering efficient switching capabilities for various electronic designs.

STF6N65K3 Quick Information

Product Type: MOSFET
Canonical Name: STF6N65K3 N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

STF6N65K3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STF6N65K3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STF6N65K3 Features

  • 650V drain-source voltage rating.
  • 5.4A continuous drain current.
  • 1.3 Ohm maximum on-resistance.
  • TO-220FP package for through-hole mounting.
  • Operates up to 150°C junction temperature.

STF6N65K3 Applications

  • Suitable for power switching circuits.
  • Used in high voltage applications.
  • Designed for efficient energy conversion.
  • Ideal for discrete power designs.

STF6N65K3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of STF6N65K3?

650V.

What is the continuous drain current rating?

5.4A at case temperature.

What is the maximum on-resistance?

1.3Ω at 2.8A with a 10V gate drive.

What is the maximum gate charge?

35nC at 10V gate-source voltage.

What is the maximum operating junction temperature?

150°C.

What package type is available?

TO-220-3 full pack with through-hole mounting.

What is the gate threshold voltage?

Maximum 4.5V at 50µA drain current.

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