| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,256 pcs
|
4256 pcs | On Request | 1 | On Request | On Request | 1432+ | On Request | On Request | |
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STF6N65K3 is a single N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 5.4A at a case temperature of Tc. The MOSFET has a maximum on-resistance (Rds On) of 1.3 Ohms at 2.8A and 10V gate-source voltage.
With a maximum power dissipation of 30W (Tc), this device operates at temperatures up to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 35 nC at 10V and an input capacitance (Ciss) of 880 pF at 50V. The gate threshold voltage (Vgs(th)) is 4.5V at 50µA, and the maximum gate-source voltage is ±30V.
The STF6N65K3 is housed in a TO-220-3 Full Pack package and is designed for through-hole mounting. Its technology is based on MOSFET (Metal Oxide) principles, offering efficient switching capabilities for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
5.4A at case temperature.
1.3Ω at 2.8A with a 10V gate drive.
35nC at 10V gate-source voltage.
150°C.
TO-220-3 full pack with through-hole mounting.
Maximum 4.5V at 50µA drain current.