| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDBL0120N40 is an N-Channel power MOSFET from onsemi (formerly Fairchild Semiconductor) designed for high-current switching applications. It features a drain-source voltage rating of 40V and a continuous drain current of 240A (at case temperature Tc). The device achieves a low maximum on-resistance of only 1.2mOhm when driven with 10V at 80A.
This MOSFET incorporates metal-oxide semiconductor (MOSFET) technology and is intended for surface mount assembly. It comes in the 8-PowerSFN package (supplier device package 8-HPSOF). Key electrical characteristics include a gate charge of 107nC (max at 10V) and input capacitance of 7735pF (max at 25V drain-source), which influence switching behavior.
The device can dissipate up to 300W and operate over a junction temperature range of -55°C to +175°C. The maximum gate-source voltage is ±20V, with a gate threshold voltage of 4V at 250µA drain current. This part is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited).
40V
240A at case temperature (Tc)
1.2mOhm maximum at 80A drain current and 10V gate-source voltage
-55°C to +175°C junction temperature
8-PowerSFN (supplier device package 8-HPSOF), surface mount
RoHS3 Compliant (unverified, data from existing database)
300W
