| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,446 pcs
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2446 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The IPD60R600P6 is an N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS P6 series. It is designed for high-voltage switching applications, featuring a drain-source voltage rating of 600V (650V at maximum junction temperature) and a continuous drain current of 7.3A at case temperature. The device offers a maximum drain-source on-resistance of 600mOhm at a gate-source voltage of 10V and a drain current of 2.4A.
Key electrical characteristics include a typical gate charge of 12nC at Vgs=10V, a maximum input capacitance of 557pF at Vds=100V, and a typical output capacitance stored energy of 1.8µJ at Vds=400V. The body diode supports a di/dt of 500A/µs, and the device is rated for a maximum pulsed drain current of 18A. The maximum power dissipation is 63W at case temperature.
The IPD60R600P6 is housed in a TO-252-3 (DPak) surface-mount package with a PG-TO252-3 supplier device package. It is designed for applications such as PFC stages, hard-switching PWM stages, and resonant switching stages, commonly found in PC silverboxes, adapters, LCD and PDP TVs, lighting, servers, telecom, and UPS systems. The device is fully qualified according to JEDEC for industrial applications.
The CoolMOS P6 series combines the experience of a leading superjunction MOSFET supplier with high-class innovation, offering extremely low switching and conduction losses for more efficient, compact, and cooler designs. The device features Pb-free plating and a halogen-free mold compound.
The drain-source voltage rating is 600V, with a maximum of 650V at maximum junction temperature.
The continuous drain current is 7.3A at case temperature.
The maximum on-resistance is 600mOhm at a gate-source voltage of 10V and a drain current of 2.4A.
The IPD60R600P6 is available in a TO-252-3 (DPak) surface-mount package.
The operating temperature range is -55°C to 150°C (junction temperature).
The part is listed as RoHS3 compliant, but this status is unverified.
The typical gate charge is 12nC at a gate-source voltage of 10V.