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DMS3015SSS-13 N-channel enhancement mode MOSFET with integrated Schottky diode. Rated for 30V drain-source voltage and 11A continuous drain current.
Mfr Part #:

DMS3015SSS-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-channel enhancement mode MOSFET with integrated Schottky diode. Rated for 30V drain-source voltage and 11A continuous drain current.
✓ Total Stock: 6,250 pcs
$ Price Range: $0.17 - $0.82

DMS3015SSS-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request 24+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,250 pcs
On Request
1250 pcs On Request 1 On Request On Request 1128+1044+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMS3015SSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMS3015SSS-13 Description

Short technical summary and product information.

The DMS3015SSS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated featuring an integrated Schottky barrier diode. It is designed for high conversion efficiency in power management applications.

 

Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 11A at 25°C ambient, and a low on-resistance of 11.9 mOhm at 10V gate drive. The device also offers a pulsed drain current rating of 80A and is 100% UIS and Rg tested for ruggedness.

 

The MOSFET is housed in an 8-SOIC (SO-8) surface mount package with molded plastic case material rated UL 94V-0. It is qualified to AEC-Q101 standards for high reliability and is fully RoHS3 compliant, lead-free, and halogen-free.

DMS3015SSS-13 Quick Information

Product Type: MOSFET
Canonical Name: DMS3015SSS-13 N-Channel Enhancement Mode MOSFET with Schottky Diode
Subcategory: Single MOSFETs

DMS3015SSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMS3015SSS-13 Estimated Pricing

Qty Low High
1+ $0.82 $0.82
10+ $0.51 $0.51
25+ $0.42 $0.42
50+ $0.37 $0.37
100+ $0.33 $0.33
2,500+ $0.20 $0.20
7,500+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMS3015SSS-13 Features

  • N-channel MOSFET with integrated Schottky diode.
  • 30V maximum drain-source voltage rating.
  • 11A continuous drain current at 25°C.
  • Low on-resistance of 11.9 mOhm.
  • AEC-Q101 qualified for automotive reliability.

DMS3015SSS-13 Applications

  • Ideal for DC-DC converter circuits.
  • Used in power management systems.
  • Suitable for load switching applications.
  • Applicable in automotive electronic modules.

DMS3015SSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMS3015SSS-13?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 11A at 25°C ambient temperature.

What package is the DMS3015SSS-13 available in?

It is available in an 8-SOIC (SO-8) surface mount package.

Is the DMS3015SSS-13 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 11.9 mOhm at Vgs=10V and Id=11A.

Is this part recommended for new designs?

No, the datasheet indicates it is not recommended for new designs.

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