| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,216 pcs
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6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMFS5C682NLAFT1G from On Semiconductor is a single N-Channel MOSFET designed for efficient power management. It offers a drain-to-source voltage of 60V and a maximum on-resistance (Rds On) of 21mOhm at a gate-source voltage of 10V and a drain current of 10A. This MOSFET can handle a continuous drain current of 8.8A at ambient temperature (Ta) and 25A at case temperature (Tc), with a maximum power dissipation of 3.5W (Ta) and 28W (Tc).
Featuring a small footprint, this device is suitable for compact designs. It operates within a temperature range of -55°C to 175°C (TJ). The MOSFET is available in a 5-DFN (5x6) package, specifically the 8-PowerTDFN, 5 Leads variant, and is designed for surface mounting.
Key electrical characteristics include a gate threshold voltage of 2V at 16µA, a gate-to-source voltage range of ±20V, input capacitance of 410pF at 25V, and a gate charge of 5nC at 10V. The device is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 60V.
The maximum Rds On is 21mOhm at a gate-source voltage of 10V and a drain current of 10A.
The continuous drain current is 8.8A at ambient temperature and 25A at case temperature.
The operating temperature range is -55°C to 175°C (TJ).
It is in an 8-PowerTDFN, 5 Leads package, designed for surface mounting.