| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,520 pcs
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3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Maximum @ TC=25 °C) | |
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The FQD2N90TM is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for high voltage switching applications. It features a drain-source voltage rating of 900V and a continuous drain current of 1.7A at 25°C case temperature. The on-resistance is typically 7.2 Ohm at 850mA with a 10V gate drive. The gate threshold voltage is 5V maximum at 250µA drain current.
Electrical characteristics include a maximum gate charge of 15nC at 10V gate-source voltage and input capacitance of 500pF at 25V drain-source voltage. The device can handle a maximum gate-source voltage of ±30V. Power dissipation is rated at 2.5W at ambient temperature 25°C and 50W at case temperature 25°C. The operating junction temperature range is -55°C to 150°C.
This MOSFET is housed in a surface mount TO-252-3 (DPak) package, also known as SC-63 or TO-252AA, suitable for automated assembly. It is RoHS3 compliant, with MSL level 1 (unlimited) and REACH unaffected status. The device is suitable for use in power supplies, DC-DC converters, and other high voltage switching circuits.
900V.
TO-252-3, DPak (2 Leads + Tab), SC-63, also known as TO-252AA.
-55°C to 150°C (junction).
RoHS3 compliant according to existing data.
1.7A at 25°C case temperature.
7.2 Ohm maximum at 850mA and 10V gate voltage.
5V maximum at 250µA drain current.