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FQP12P20 The FQP12P20 is a P-Channel MOSFET from ON Semiconductor, featuring a 200V drain-source voltage and 11.5A continuous drain current. It is housed in a TO-220-3 through-hole package.
Mfr Part #:

FQP12P20

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQP12P20 is a P-Channel MOSFET from ON Semiconductor, featuring a 200V drain-source voltage and 11.5A continuous drain current. It is housed in a TO-220-3 through-hole package.
✓ Total Stock: 6,131 pcs

FQP12P20 Available from 3 distributors

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Seba Components ✓
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3,600 pcs
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Xingangxin ✓
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1,531 pcs
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1531 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
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1,000 pcs
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FQP12P20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQP12P20 Description

Short technical summary and product information.

FQP12P20 is a P-Channel enhancement-mode MOSFET designed and manufactured by ON Semiconductor. It features a drain-source voltage rating of 200V and a continuous drain current of 11.5A at case temperature Tc. The device has a maximum power dissipation of 120W at Tc.

 

The MOSFET offers a typical drain-source on-resistance of 470 mOhm at 5.75A and 10V gate drive. The gate threshold voltage is 5V maximum at 250µA. It requires a 10V gate drive for optimal performance. The input capacitance is 1200pF at 25V drain-source voltage, and the total gate charge is 40nC at 10V.

 

The device is designed for general-purpose switching and power management applications. It operates over a junction temperature range of -55°C to 150°C.

 

The FQP12P20 is available in the industry-standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks.

FQP12P20 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: On Semiconductor FQP12P20 P-Channel MOSFET, 200V, 11.5A, TO-220-3
Subcategory: Single MOSFET

FQP12P20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP12P20 Features

  • P-Channel MOSFET with 200V drain-source rating.
  • Continuous drain current rated at 11.5A.
  • Low on-resistance of 470 mOhm typical.
  • Through-hole TO-220-3 package for easy mounting.
  • Operates from -55°C to 150°C junction temperature.

FQP12P20 Applications

  • Used in high-side load switching applications.
  • Suitable for DC-DC converter power stages.
  • Ideal for power management in industrial systems.
  • Can be used in battery protection circuits.

FQP12P20 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The drain-source voltage rating is 200V.

What package is available?

The FQP12P20 comes in a TO-220-3 through-hole package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is this component RoHS compliant?

The FQP12P20 is marked as RoHS3 Compliant.

What is the gate threshold voltage?

The maximum gate threshold voltage is 5V at 250µA.

What is the continuous drain current rating?

The continuous drain current is 11.5A at case temperature Tc.

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