| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,155 pcs
|
6155 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPD90N04S404ATMA1 is an N-channel enhancement-mode power MOSFET from Infineon Technologies, part of the OptiMOS-T2 family. It is designed for high-current switching applications with a drain-source breakdown voltage of 40V and a continuous drain current rating of 90A at 25°C case temperature. The device features a maximum drain-source on-resistance of 4.1mΩ at Vgs=10V, with a typical value of 3.7mΩ, enabling efficient power conversion.
This MOSFET offers fast switching performance with typical turn-on delay of 10ns, rise time of 11ns, turn-off delay of 9ns, and fall time of 11ns. The total gate charge is 43nC maximum (33nC typical) at Vgs=10V, and input capacitance is 3440pF maximum at Vds=25V. The device is avalanche-tested and rated for 95mJ single-pulse avalanche energy at 45A.
The IPD90N04S404ATMA1 is qualified to AEC standards and supports operating junction temperatures from -55°C to 175°C. It is RoHS compliant and rated MSL1 up to 260°C peak reflow. The device is packaged in a PG-TO252-3-313 (TO-252-3, DPak) surface-mount package with package marking 4N0404.
Typical applications include automotive systems, power management circuits, DC-DC converters, and load switching where high current handling and low conduction losses are required. The device is 100% avalanche tested for ruggedness in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.65 | $1.65 |
| 10+ | $1.05 | $1.05 |
| 50+ | $0.78 | $0.78 |
| 100+ | $0.70 | $0.70 |
| 500+ | $0.55 | $0.55 |
| 2,500+ | $0.46 | $0.46 |
| 7,500+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 90A at Tc=25°C with Vgs=10V, and 81A at Tc=100°C.
The maximum drain-source on-resistance is 4.1mΩ at Vgs=10V and Id=90A, with a typical value of 3.7mΩ.
The operating junction temperature range is -55°C to 175°C.
The device is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package, with supplier device package PG-TO252-3-313.
Yes, the datasheet states it is a Green Product (RoHS compliant).
The maximum power dissipation is 71W at Tc=25°C.