| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | 2009 | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW26NM60 is an N-Channel Power MOSFET designed for high voltage applications. It offers a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 30A at 25°C.
This MOSFET boasts a low on-resistance (Rds On) of 135mOhm maximum at 13A and 10V, along with a gate charge (Qg) of 102nC maximum at 10V. Its input capacitance (Ciss) is 2900pF maximum at 25V.
The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 313W at 25°C. It features integrated Zener diode protection for enhanced ESD capability.
The STW26NM60 is supplied in a TO-247-3 package suitable for through-hole mounting. Its technology is MOSFET (Metal Oxide), and it is part of the MDmesh™ family, known for high dv/dt and avalanche capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
30A at 25°C case temperature.
135mOhm maximum at 13A and 10V gate drive.
-55°C to 150°C junction temperature.
TO-247-3 through-hole package.
102nC at 10V gate drive.
Yes, up to 6000V HBM.