| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,170 pcs
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6170 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The IPP024N06N3G is a 60V, 120A N-Channel enhancement mode MOSFET fabricated using Infineon's OptiMOS technology. It features an ultra-low on-resistance of 2.4mOhm maximum at Vgs=10V and Id=100A, enabling high efficiency in power conversion applications. The device can handle continuous drain current of 120A at case temperature and offers a maximum power dissipation of 250W.
With a gate threshold voltage of up to 4V at 196µA and a maximum gate-source voltage of ±20V, the MOSFET is designed for logic-level drive compatibility. Its input capacitance is 23000pF at Vds=30V and gate charge is 275nC at Vgs=10V, providing good switching performance. The operating junction temperature range spans -55°C to 175°C, suitable for demanding thermal environments.
The device is housed in a standard through-hole TO-220-3 package (supplier package PG-TO220-3-1), allowing easy mounting on PCBs and heatsinks. It is intended for high-current switching applications such as power supplies, motor drives, and automotive systems.
60V.
120A (at case temperature Tc).
Maximum 2.4mOhm at Vgs=10V and Id=100A.
-55°C to 175°C (junction temperature).
Data indicates RoHS3 compliance, but this is unverified and listed with low confidence.
TO-220-3 (through-hole mounting, supplier package PG-TO220-3-1).
23000pF (maximum) at Vds=30V.