SI2307BDS-T1-GE3 The Vishay Dale SI2307BDS-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 2.5A continuous current. It is supplied in a SOT-23-3 surface mount package.
Mfr Part #:

SI2307BDS-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2307BDS-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 2.5A continuous current. It is supplied in a SOT-23-3 surface mount package.
✓ Total Stock: 6,234 pcs
$ Price Range: $0.99

SI2307BDS-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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6,234 pcs
6234 pcs On Request 1 On Request On Request 09+ On Request On Request

SI2307BDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2307BDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2307BDS-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.5A at ambient temperature.

 

This MOSFET has a low on-resistance (Rds On) of 78mOhm at 3.2A and 10V gate drive voltage, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. The input capacitance (Ciss) is 380pF at 15V, and the gate charge (Qg) is 15nC at 10V. It operates within a temperature range of -55°C to 150°C.

 

Packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount configuration, this component is suitable for space-constrained designs. The maximum power dissipation is 750mW at ambient temperature. The gate-source voltage (Vgs) limit is ±20V.

 

This MOSFET utilizes Metal Oxide technology and is RoHS3 compliant. Its MSL is rated at 1 Unlimited, and REACH status is unaffected.

SI2307BDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2307BDS-T1-GE3 P-Channel MOSFET
Subcategory: Single

SI2307BDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2307BDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2307BDS-T1-GE3 Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 2.5A at ambient temperature.
  • Low on-resistance of 78mOhm at 3.2A, 10V.
  • SOT-23-3 surface mount package.
  • Operating temperature range of -55°C to 150°C.

SI2307BDS-T1-GE3 Applications

  • Suitable for power switching applications.
  • Ideal for load switch circuits.
  • Used in battery management systems.
  • Applicable in portable electronic devices.

SI2307BDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SI2307BDS-T1-GE3?

The maximum drain-to-source voltage (Vdss) for the SI2307BDS-T1-GE3 is 30V.

What is the continuous drain current of the SI2307BDS-T1-GE3?

The continuous drain current (Id) for the SI2307BDS-T1-GE3 is 2.5A at ambient temperature.

What is the on-resistance of the SI2307BDS-T1-GE3?

The maximum on-resistance (Rds On) for the SI2307BDS-T1-GE3 is 78mOhm at 3.2A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range for the SI2307BDS-T1-GE3 is -55°C to 150°C.

What package type is the SI2307BDS-T1-GE3 supplied in?

The SI2307BDS-T1-GE3 is supplied in a SOT-23-3 package.

Is the SI2307BDS-T1-GE3 RoHS compliant?

The SI2307BDS-T1-GE3 is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) for the SI2307BDS-T1-GE3 is 1 Unlimited.

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