FDMC2523P The FDMC2523P is a P-Channel enhancement mode MOSFET from On Semiconductor's QFET family. It offers a maximum drain-source voltage of 150V, continuous drain current of 3A, and low on-resistance of 1.5 Ohm.
Mfr Part #:

FDMC2523P

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMC2523P is a P-Channel enhancement mode MOSFET from On Semiconductor's QFET family. It offers a maximum drain-source voltage of 150V, continuous drain current of 3A, and low on-resistance of 1.5 Ohm.
✓ Total Stock: 6,078 pcs
$ Price Range: $1.15 - $2.63

FDMC2523P Available from 6 distributors

✓ Authorised
✓ Non-Authorised

FDMC2523P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC2523P Description

Short technical summary and product information.

The FDMC2523P is a P-Channel enhancement mode power MOSFET designed and manufactured by On Semiconductor using advanced planar stripe DMOS technology. This device is tailored for applications requiring efficient switching and high energy handling.

 

Key electrical characteristics include a maximum drain-source voltage of 150V, continuous drain current of 3A (Tc=25°C), and a drain-source on-resistance of 1.5 Ohm at Vgs=-10V, Id=-1.5A. The gate threshold voltage is 5V at Id=250µA, and the maximum gate-source voltage is ±30V. The device exhibits low gate charge (typical 6.2nC) and low reverse transfer capacitance (typical 10pF), supporting fast switching performance.

 

Packaged in a surface mount 8-PowerWDFN (8-MLP 3.3x3.3) case, the FDMC2523P is supplied in tape and reel packaging with a standard quantity of 3000 pieces. The operating junction temperature range is -55°C to +150°C, with a maximum power dissipation of 42W at Tc=25°C.

FDMC2523P Quick Information

Product Type: MOSFET
Series: FDMC2523P
Canonical Name: FDMC2523P
Subcategory: Power MOSFET

FDMC2523P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC2523P Estimated Pricing

Qty Low High
1+ $2.63 $2.63
10+ $1.69 $1.69
100+ $1.15 $1.15
3,000+ $1.15 $1.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC2523P Features

  • P-Channel enhancement mode power MOSFET.
  • Maximum drain-source voltage of 150V.
  • Continuous drain current of 3A at Tc=25°C.
  • Low on-resistance of 1.5 Ohm max.
  • Pb-Free, Halogen Free, RoHS compliant design.

FDMC2523P Applications

  • Active clamp switch in power supplies.
  • High efficiency switching DC-DC converters.
  • Audio amplifier output stages.
  • DC motor control circuits.

FDMC2523P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMC2523P?

The maximum drain-source voltage (Vdss) is 150V.

What is the continuous drain current rating of the FDMC2523P?

The continuous drain current is 3A at Tc=25°C, and 1.8A at Tc=100°C.

What is the operating temperature range of the FDMC2523P?

The operating junction temperature range is -55°C to +150°C.

Is the FDMC2523P RoHS compliant?

Yes, the FDMC2523P is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.

What package does the FDMC2523P come in?

The FDMC2523P is supplied in an 8-PowerWDFN surface mount package, also designated as 8-MLP (3.3x3.3).

What is the typical gate charge of the FDMC2523P?

The typical gate charge is 6.2nC at Vgs=10V.

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