DistyParts Icon
STW33N60M2 The STMicroelectronics STW33N60M2 is an N-Channel MOSFET with a 600V drain-to-source voltage and 26A continuous drain current. It is housed in a TO-247-3 package.
Mfr Part #:

STW33N60M2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STW33N60M2 is an N-Channel MOSFET with a 600V drain-to-source voltage and 26A continuous drain current. It is housed in a TO-247-3 package.
✓ Total Stock: 6,226 pcs
$ Price Range: $2.56

STW33N60M2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,530 pcs
On Request
4530 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,696 pcs
On Request
1696 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STW33N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

STW33N60M2 Description

Short technical summary and product information.

The STMicroelectronics STW33N60M2 is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 26A at a case temperature (Tc) of 25°C.

 

This MOSFET offers a low on-resistance (Rds On) of 125mOhm at 13A and 10V gate-source voltage, ensuring efficient power transfer. The gate charge (Qg) is 45.5nC maximum at 10V, and the input capacitance (Ciss) is 1781pF maximum at 100V.

 

With an operating temperature range of -55°C to 150°C (TJ) and a maximum power dissipation of 190W (Tc), the STW33N60M2 is suitable for demanding environments. It utilizes MOSFET (Metal Oxide) technology and is available in a TO-247-3 package with through-hole mounting.

 

The component is specified with a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA and a maximum gate-source voltage (Vgs) of ±25V.

STW33N60M2 Quick Information

Product Type: MOSFET
Series: MDmesh M2
Canonical Name: STMicroelectronics STW33N60M2 N-Channel MOSFET
Subcategory: Single

STW33N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STW33N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STW33N60M2 Features

  • 600V drain-to-source voltage rating.
  • 26A continuous drain current capability.
  • 125mOhm maximum on-resistance.
  • TO-247-3 package for through-hole mounting.
  • Wide operating temperature range.

STW33N60M2 Applications

  • Power supply switching applications.
  • Motor control circuits.
  • High voltage power conversion.
  • Industrial power systems.

STW33N60M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

600V maximum.

What is the package type?

TO-247-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the continuous drain current?

26A maximum at case temperature.

What is the on-resistance?

125mOhm maximum at 13A and 10V gate drive.

What is the gate charge?

45.5nC maximum at 10V gate voltage.

What is the maximum power dissipation?

190W at case temperature.

Home
Account

Categories