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STF40NF20 The STMicroelectronics STF40NF20 is an N-Channel MOSFET with a 200V drain-to-source voltage and 40A continuous drain current. It is supplied in a TO-220FP package.
Mfr Part #:

STF40NF20

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STF40NF20 is an N-Channel MOSFET with a 200V drain-to-source voltage and 40A continuous drain current. It is supplied in a TO-220FP package.
✓ Total Stock: 6,150 pcs
$ Price Range: $2.56

STF40NF20 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
3,650 pcs
On Request
3650 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STF40NF20 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STF40NF20 Description

Short technical summary and product information.

The STMicroelectronics STF40NF20 is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 40A at 25°C (Tc).

 

This MOSFET offers a low on-resistance (Rds On) of 45mOhm at 20A and 10V gate drive voltage. The gate charge (Qg) is 75nC maximum at 10V, and the input capacitance (Ciss) is 2500pF maximum at 25V.

 

The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 40W (Tc). It is constructed using MOSFET (Metal Oxide) technology.

 

The STF40NF20 is available in a TO-220FP package and is designed for through-hole mounting. It is RoHS3 compliant and REACH unaffected.

STF40NF20 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STF40NF20 N-Channel MOSFET
Subcategory: N-Channel

STF40NF20 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STF40NF20 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STF40NF20 Features

  • 200V drain-to-source voltage rating.
  • 40A continuous drain current capability.
  • Low 45mOhm Rds On at 20A.
  • 75nC maximum gate charge.
  • TO-220FP package for through-hole mounting.

STF40NF20 Applications

  • Suitable for power switching circuits.
  • Used in DC-to-DC converters.
  • Ideal for motor control applications.
  • Applicable in power supply units.

STF40NF20 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STF40NF20?

The drain-source voltage (Vdss) is 200V.

What package is the STF40NF20 available in?

It comes in a TO-220-3 Full Pack (TO-220FP) through-hole package.

What is the operating temperature range of the STF40NF20?

The junction temperature range is -55°C to 150°C.

What is the continuous drain current of the STF40NF20?

The continuous drain current (Id) is 40A at 25°C.

What is the on-resistance of the STF40NF20?

The maximum on-resistance is 45mOhm at 20A drain current and 10V gate-source voltage.

What is the gate charge of the STF40NF20?

The maximum gate charge is 75nC at 10V gate voltage.

What is the input capacitance of the STF40NF20?

The maximum input capacitance (Ciss) is 2500pF at 25V drain-source voltage.

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