Mfr Part #:

FDP085N10A-F102

N-Channel MOSFET from On Semiconductor with 100V drain-source voltage rating, 96A continuous drain current, and low 8.5mOhm Rds(on) in a TO-220-3 through-hole package.

✓ Total Stock: 6,240 pcs

$ Price Range: $1.42 - $3.72

FDP085N10A-F102 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Eito Shoji ✓ Non-Authorised Inventory information	2,620 pcs On Request	2620 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,620 pcs On Request	2620 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDP085N10A-F102 Description

Short technical summary and product information.

The FDP085N10A-F102 is an N-Channel enhancement mode MOSFET designed for high efficiency power switching applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 96A at 25°C case temperature. The device offers a low maximum on-resistance (Rds(on)) of 8.5mOhm at 96A and 10V gate drive, minimizing conduction losses. With a maximum gate charge (Qg) of 40nC at 10V and an input capacitance (Ciss) of 2695pF at 50V, the MOSFET is optimized for fast switching performance. The threshold voltage (Vgs(th)) is 4V max at 250µA drain current, and the recommended drive voltage is 10V. The device is rated for a maximum power dissipation of 188W at case temperature and can operate over a junction temperature range of -55°C to 175°C. Housed in a standard TO-220-3 through-hole package, it is suitable for through-hole mounting on PCBs.

FDP085N10A-F102 Quick Information

Product Type: MOSFET (Metal Oxide)

Series: PowerTrench

Canonical Name: N-Channel MOSFET, 100V, 96A, TO-220-3

Subcategory: N-Channel MOSFET

FDP085N10A-F102 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDP085N10A-F102 Estimated Pricing

Qty	Low	High
1+	$3.72	$3.72
10+	$1.89	$1.89
100+	$1.70	$1.70
500+	$1.42	$1.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP085N10A-F102 Features

N-Channel enhancement mode MOSFET.
100V drain-source voltage rating.
96A continuous drain current.
Low 8.5mOhm Rds(on) at 10V gate drive.
TO-220-3 through-hole package.

FDP085N10A-F102 Applications

Used in power supply switching circuits.
Suitable for DC-DC converters.
Motor control applications.
High current load switching.

FDP085N10A-F102 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDP085N10A-F102?

100V.

What is the continuous drain current at 25°C?

96A.

What is the maximum Rds(on) and at what conditions?

8.5mOhm at 96A drain current and 10V gate-source voltage.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

What package does the FDP085N10A-F102 come in?

TO-220-3 through-hole package.

What is the maximum gate charge?

40nC at 10V gate-source voltage.

Is the FDP085N10A-F102 RoHS compliant?

RoHS3 Compliant (unverified).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	96 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2695 pF
Medical Grade	No
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Storage Temperature	-55°C ~ 175°C
Supplier Device Package	TO-220-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V