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FCPF165N65S3L1 N-Channel power MOSFET rated for 650V drain-source voltage and 19A continuous drain current. Features 165mΩ maximum on-resistance in a TO-220F-3 through-hole package.
Mfr Part #:

FCPF165N65S3L1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET rated for 650V drain-source voltage and 19A continuous drain current. Features 165mΩ maximum on-resistance in a TO-220F-3 through-hole package.
✓ Total Stock: 6,100 pcs

FCPF165N65S3L1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Rayichip ✓
Non-Authorised Inventory information
6,078 pcs
On Request
6078 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
22 pcs
On Request
22 pcs On Request 1 On Request On Request On Request On Request On Request
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FCPF165N65S3L1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCPF165N65S3L1 Description

Short technical summary and product information.

The FCPF165N65S3L1 is an N-Channel power MOSFET from ON Semiconductor's SUPERFET III Easy Drive series. It utilizes charge balance super-junction technology to deliver low on-resistance and low gate charge for efficient power conversion.

 

Rated for a maximum drain-to-source voltage of 650V and continuous drain current of 19A at 25°C, this MOSFET features a typical on-resistance of 140mΩ and maximum of 165mΩ at 10V gate drive. The device offers ultra-low typical gate charge of 35nC and low effective output capacitance of 345pF, enabling high-frequency switching with reduced EMI.

 

Housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, the FCPF165N65S3L1 is suitable for computing, telecom, server, and industrial power supplies as well as lighting, charger, and adapter applications. It is 100% avalanche tested and rated for repetitive avalanche energy events. The device is Pb-free and RoHS compliant.

FCPF165N65S3L1 Quick Information

Product Type: MOSFET
Series: SUPERFET III Easy Drive
Canonical Name: FCPF165N65S3L1 N-Channel Power MOSFET
Subcategory: Single N-Channel MOSFET

FCPF165N65S3L1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FCPF165N65S3L1 Features

  • 650V drain-source voltage rating.
  • 19A continuous drain current capacity.
  • Low 165mΩ maximum on-resistance.
  • Ultra-low gate charge of 35nC.
  • 100% avalanche tested for reliability.

FCPF165N65S3L1 Applications

  • Computing and display power supplies.
  • Telecom and server power systems.
  • Industrial power supply designs.
  • Lighting and LED driver circuits.
  • Charger and adapter applications.

FCPF165N65S3L1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage is 650V.

What is the continuous drain current?

Continuous drain current is 19A at Tc=25°C and 12.3A at Tc=100°C.

What is the on-resistance?

Maximum on-resistance is 165mOhm at 9.5A, 10V gate drive; typical is 140mOhm.

What package does it come in?

It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is it RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free.

What is the gate threshold voltage?

The maximum gate threshold voltage is 4.5V at 1.9mA drain current.

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