Mfr Part #:

FQB55N10TM

FQB55N10TM is an N-Channel MOSFET from On Semiconductor with 100V drain-source voltage and 55A drain current. It comes in a D²PAK (TO-263) surface mount package.

✓ Total Stock: 6,205 pcs

$ Price Range: $1.03 - $3.49

FQB55N10TM Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	5,820 pcs On Request	5820 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	285 pcs On Request	285 pcs	On Request	1	On Request	On Request	11+	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	100 pcs On Request	100 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FQB55N10TM Description

Short technical summary and product information.

The FQB55N10TM is an N-Channel MOSFET from On Semiconductor. It is designed for high-efficiency power switching applications. The device features a drain-to-source voltage rating of 100V and a continuous drain current of 55A at Tc. The on-resistance is typically 26 mOhm maximum when driven with a 10V gate-source voltage at 27.5A drain current. The gate charge is 98 nC at 10V, and the input capacitance is 2730 pF at 25V drain-source voltage. The maximum gate threshold voltage is 4V at 250µA drain current. The maximum gate-source voltage is ±25V. Power dissipation is rated at 155W at Tc and 3.75W at Ta. The device operates over a junction temperature range of -55°C to 175°C. It is offered in a surface mount D²PAK (TO-263) package with 3 leads including a tab. The package is suitable for power dissipation and is compatible with standard surface mount assembly processes.

FQB55N10TM Quick Information

Product Type: MOSFET

Canonical Name: N-Channel MOSFET, 100V, 55A, D²PAK

Subcategory: Single MOSFET

FQB55N10TM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

FQB55N10TM Estimated Pricing

Qty	Low	High
1+	$3.49	$3.49
10+	$2.27	$2.27
50+	$1.75	$1.75
100+	$1.58	$1.58
800+	$1.10	$1.10
1,600+	$1.03	$1.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQB55N10TM Features

N-Channel MOSFET with 100V drain-source rating.
Rated for 55A drain current at Tc.
Low on-resistance of 26mOhm at 10V gate drive.
Surface mount D²PAK (TO-263) package.
Operating temperature range -55°C to 175°C.

FQB55N10TM Applications

Used in DC-DC converter circuits.
Suitable for motor drive applications.
Ideal for high-efficiency power supplies.
Used in battery management systems.
Applicable for load switching in power distribution.

FQB55N10TM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage rating of the FQB55N10TM?

100V.

What package is the FQB55N10TM available in?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (surface mount).

What is the operating temperature range?

-55°C to 175°C (junction).

What is the maximum drain current?

55A at case temperature (Tc).

What is the on-resistance of the FQB55N10TM?

26 mOhm maximum at Id=27.5A and Vgs=10V.

Is the FQB55N10TM RoHS compliant?

According to existing data, it is RoHS3 compliant, but this status is unverified.

What is the gate threshold voltage?

4V maximum at Id=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	55 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC
Input Capacitance (Ciss) (Max) @ Vds	2730 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.75 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25 V
Vgs(th) (Max) @ Id	4 V