Mfr Part #:

FQD12N20TM

N-Channel MOSFET with 200V drain-source voltage rating and 9A continuous drain current. Features 280mOhm maximum Rds(on).

✓ Total Stock: 6,020 pcs

FQD12N20TM Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,520 pcs On Request	3520 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	2,500 pcs On Request	2500 pcs	On Request	1	On Request	On Request	16+	On Request	On Request

FQD12N20TM Description

Short technical summary and product information.

The FQD12N20TM is an N-Channel power MOSFET manufactured by ON Semiconductor. It features a maximum drain-to-source voltage of 200V and a continuous drain current of 9A at case temperature, making it suitable for a variety of power switching applications.

The device offers a maximum on-resistance of 280 mOhm when driven with 10V at 4.5A drain current. It has a gate threshold voltage of 5V maximum at 250 µA, a total gate charge of 23 nC at 10V, and an input capacitance of 910 pF at 25V drain-source voltage.

The FQD12N20TM is housed in a surface-mount TO-252-3 (DPak) package with supplier device package designation TO-252AA. It supports an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature and 55W at case temperature.

This MOSFET is designed for use in power management circuits, DC-DC converters, and high-voltage switching stages. Its surface-mount package facilitates automated assembly in compact designs.

FQD12N20TM Quick Information

Product Type: MOSFET

Series: FQD12N20

Canonical Name: FQD12N20TM N-Channel MOSFET

Subcategory: N-Channel MOSFET

FQD12N20TM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQD12N20TM Features

200V drain-to-source voltage rating.
9A continuous drain current at case temperature.
280 mOhm maximum on-resistance at 10V gate drive.
Surface-mount TO-252AA (DPAK) package.
Operating junction temperature range -55°C to 150°C.

FQD12N20TM Applications

High-voltage power supply switching circuits.
DC-DC converter and regulator stages.
Motor control and drive applications.
Load switching in industrial and consumer electronics.

FQD12N20TM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the FQD12N20TM?

200 V.

What package does the FQD12N20TM come in?

Surface-mount TO-252-3 (DPak, SC-63), supplier device package TO-252AA.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FQD12N20TM RoHS compliant?

RoHS3 compliant status is indicated but unverified (low confidence).

What is the maximum Rds(on) and its test conditions?

280 mOhm maximum at ID = 4.5 A and VGS = 10 V.

What is the gate threshold voltage?

5 V maximum at ID = 250 µA.

What is the total gate charge?

23 nC maximum at VGS = 10 V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	9 A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	910 pF @ 25 V
Lead Style	Tab
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5 W (Ta)
Rds On (Max) @ Id, Vgs	280 mOhm @ 4.5 A, 10 V
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V @ 250 µA