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IRFD9123 Vishay Dale IRFD9123 is a P-Channel enhancement-mode MOSFET with 100V drain-source breakdown voltage and 1A continuous drain current.
Mfr Part #:

IRFD9123

Available from 2 distributors
Mfr Name: Vishay
Vishay
Vishay Dale IRFD9123 is a P-Channel enhancement-mode MOSFET with 100V drain-source breakdown voltage and 1A continuous drain current.
✓ Total Stock: 6,021 pcs

IRFD9123 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
5,905 pcs
On Request
5905 pcs On Request 1 On Request On Request 00+ On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
116 pcs
On Request
116 pcs On Request 1 On Request On Request 93 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRFD9123 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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IRFD9123 Description

Short technical summary and product information.

The Vishay Dale IRFD9123 is a P-Channel enhancement-mode MOSFET designed for switching and amplification applications.

 

This device features a drain-to-source voltage (Vdss) of 100V, a continuous drain current (ID) of 1A at ambient temperature, and a maximum drain-source on-resistance (RDS(on)) of 600mΩ at 600mA gate drive of 10V.

 

Key electrical characteristics include a maximum input capacitance (Ciss) of 390pF at 25V and a total gate charge (Qg) of 18nC at 10V, making it suitable for medium-frequency switching. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA drain current.

 

The component is housed in a 4-DIP (0.300", 7.62mm) through-hole package, with a supplier device package of 4-HVMDIP. This mounting type facilitates easy integration into prototyping boards and traditional through-hole PCB designs.

IRFD9123 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: Vishay Dale IRFD9123 P-Channel MOSFET
Subcategory: Single MOSFET

IRFD9123 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFD9123 Features

  • P-Channel enhancement-mode MOSFET design.
  • 100V drain-to-source voltage rating.
  • 1A continuous drain current at Ta.
  • 600mΩ maximum on-resistance at 10V.
  • Through-hole 4-DIP (4-HVMDIP) package.

IRFD9123 Applications

  • Power management in industrial equipment.
  • Load switching for battery-powered devices.
  • Medium-frequency inverter and converter circuits.
  • General-purpose P-Channel switching applications.

IRFD9123 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRFD9123?

100 V

What type of MOSFET is the IRFD9123?

P-Channel enhancement-mode MOSFET

What is the maximum continuous drain current?

1 A at ambient temperature

What is the on-resistance (RDS(on))?

600 mΩ maximum at 600mA drain current and 10V gate-source voltage

What is the package type?

4-DIP (0.300", 7.62mm) through-hole package, also known as 4-HVMDIP

What is the gate threshold voltage?

4 V maximum at 250 µA drain current

What is the input capacitance (Ciss)?

390 pF maximum at 25 V drain-source voltage

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