| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC076N06NS3GATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power management applications. The device features a drain-source voltage rating of 60V and a continuous drain current of 50A at case temperature. The maximum on-resistance is 7.6mOhm at 50A and 10V gate drive, enabling low conduction losses. The gate charge is 50nC at 10V, and input capacitance is 4000pF at 30V, indicating moderate switching performance. The MOSFET can dissipate up to 69W at case temperature and operates over a junction temperature range of -55°C to 150°C. It is offered in an 8-PowerTDFN surface mount package (PG-TDSON-8-5), suitable for compact PCB layouts. The device is RoHS3 compliant and has an MSL of 1 (unlimited). Typical applications include DC-DC converters, power supplies, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.14 | $1.14 |
| 10+ | $0.71 | $0.71 |
| 100+ | $0.47 | $0.47 |
| 500+ | $0.43 | $0.43 |
| 5,000+ | $0.27 | $0.27 |
| 10,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
8-PowerTDFN (PG-TDSON-8-5).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
50A at case temperature.
7.6mOhm at 50A and 10V gate drive.
50nC at 10V.