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DMN3112SSS-13 DMN3112SSS-13 is a 30V, 6A N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features low on-resistance (57mOhm at 10V) and low input capacitance (268pF).
Mfr Part #:

DMN3112SSS-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN3112SSS-13 is a 30V, 6A N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features low on-resistance (57mOhm at 10V) and low input capacitance (268pF).
Total Stock: 6,050 pcs

DMN3112SSS-13 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,550 pcs
5550 pcs On Request 1 On Request On Request 1401+ On Request On Request
Non-Authorised Inventory information
500 pcs
500 pcs On Request 1 On Request On Request 24+ On Request On Request

DMN3112SSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC-Q101
Case Material
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Flammability Rating
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Pulsed Drain Current
Rds On (Max) @ Id, Vgs
Standard Package Quantity
Supplier Device Package
Technology
Terminal Finish
Thermal Resistance Junction-to-Ambient
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
drain_source_on_resistance (Maximum @ Id=5.8 A, Vgs=4.5 V)

DMN3112SSS-13 Description

Short technical summary and product information.

The DMN3112SSS-13 is an N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It offers a drain-source voltage rating of 30V and a continuous drain current of 6A at 25°C ambient. The device features a low on-resistance of 57mOhm maximum at Vgs=10V and 112mOhm at Vgs=4.5V, enabling efficient switching with reduced conduction losses. Input capacitance is 268pF at Vds=15V, contributing to fast switching performance. The gate threshold voltage is 2.2V maximum, allowing logic-level drive.

 

The MOSFET is housed in an 8-SOIC (SOP-8L) surface-mount package with a molded plastic case rated UL 94V-0. It is moisture sensitivity level 1 per J-STD-020D and weighs approximately 0.074g. The device is supplied in tape and reel packaging with 2500 units per reel. It is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for automotive reliability. Typical applications include backlighting, power management functions, and DC-DC converters.

DMN3112SSS-13 Quick Information

Product Type: N-Channel Enhancement Mode MOSFET
Canonical Name: DMN3112SSS-13 - N-Channel Enhancement Mode MOSFET, 30V, 6A, 8-SOP
Subcategory: Single MOSFET

DMN3112SSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN3112SSS-13 Features

  • Low on-resistance of 57mOhm at 10V.
  • Rated for 30V drain-source voltage.
  • Continuous drain current up to 6A.
  • AEC-Q101 qualified for automotive use.
  • RoHS and halogen-free compliant.

DMN3112SSS-13 Applications

  • Ideal for DC-DC converter circuits.
  • Used in backlighting power management.
  • Suitable for load switching applications.
  • Designed for high-efficiency power systems.

DMN3112SSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the package type?

8-SOIC (0.154", 3.90mm Width) also known as SOP-8L.

What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What is the on-resistance at Vgs=10V?

57mOhm maximum at Id=5.8A.

What is the gate threshold voltage?

2.2V maximum at Id=250µA.

Is this MOSFET qualified for automotive applications?

Yes, AEC-Q101 qualified.

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