SI4100DY-T1-GE3 The Vishay Dale SI4100DY-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 6.8A continuous current. It is supplied in an 8-SOIC package.
Mfr Part #:

SI4100DY-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4100DY-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 6.8A continuous current. It is supplied in an 8-SOIC package.
✓ Total Stock: 6,020 pcs
$ Price Range: $0.99

SI4100DY-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,520 pcs
3520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

SI4100DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4100DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4100DY-T1-GE3 is an N-Channel Power MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 6.8A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 63mOhm at 4.4A and 10V Vgs, and 84mOhm at 3.8A and 6V Vgs. The gate-source voltage (Vgs) can range up to ±20V, with a threshold voltage (Vgs(th)) of 4.5V at 250µA. Its input capacitance (Ciss) is 600pF at 50V.

 

The device operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 2.5W (Ta) and 6W (Tc). The SI4100DY-T1-GE3 is available in an 8-SOIC package and is surface-mounted.

 

This MOSFET is suitable for applications such as high-frequency boost converters and LED backlights for LCD TVs. It is RoHS3 compliant and has an MSL rating of 1.

SI4100DY-T1-GE3 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: SI4100DY-T1-GE3 N-Channel 100V Power MOSFET
Subcategory: N-Channel

SI4100DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4100DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4100DY-T1-GE3 Features

  • 100V drain-source voltage rating.
  • 6.8A continuous drain current capability.
  • Low Rds(on) of 63mOhm at 10V Vgs.
  • N-Channel MOSFET technology.
  • Surface mount 8-SOIC package.

SI4100DY-T1-GE3 Applications

  • Power management in DC-DC converters.
  • Load switching in low-voltage systems.
  • Battery protection and charging circuits.
  • Motor control for small DC motors.
  • General-purpose power switching applications.

SI4100DY-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SI4100DY-T1-GE3?

The drain-source voltage (Vds) is 100V.

What is the continuous drain current for the SI4100DY-T1-GE3?

The continuous drain current is 6.8A at 25°C case temperature.

What is the Rds(on) of the SI4100DY-T1-GE3?

The Rds(on) is a maximum of 63mOhm at 4.4A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI4100DY-T1-GE3 supplied in?

It is supplied in an 8-SOIC package.

Is the SI4100DY-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

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