| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,581 pcs
|
2581 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Renesas 2SK2225-80-E#T2 is a high-voltage N-Channel MOSFET designed for applications requiring up to 1500V drain-source voltage. It can handle a continuous drain current of 2A at ambient temperature and offers a maximum on-resistance of 12Ohm when driven with 15V gate-source voltage.
The device features a gate threshold voltage of 4V at 1mA drain current and a maximum gate-source voltage rating of ±20V. Input capacitance is 990pF at Vds=10V. Power dissipation is rated at 50W at case temperature, with a maximum operating junction temperature of 150°C.
The MOSFET is housed in a TO-220-3 Full Pack package (supplier device package TO-3PFM) with through-hole mounting, suitable for high-voltage switching and power conversion circuits. The part is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $20.09 | $20.09 |
| 10+ | $12.73 | $12.73 |
| 100+ | $11.58 | $11.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1500V.
2A at ambient temperature.
12Ohm maximum at 1A drain current and 15V gate-source voltage.
150°C junction temperature.
TO-220-3 Full Pack (supplier device package TO-3PFM).
Yes, RoHS3 compliant.
4V maximum at 1mA drain current.