Transistors - FETs, MOSFETs - Arrays DistyParts

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Transistors - FETs, MOSFETs - Arrays facilitate the control of electrical signals in various applications. Key attributes include Configuration, Drain to Source Voltage (Vdss), and Gate Charge (Qg) (Max) @ Vgs. These components are essential for industrial power management and new product design.

What are Transistors - FETs, MOSFETs - Arrays ?

Transistors - FETs, MOSFETs - Arrays are semiconductor devices that control the flow of electrical signals, commonly used in power management applications. They are integral in industrial power management, new product design, and production electronics assembly. Important specifications include Configuration, which determines the transistor's arrangement for optimal performance; Drain to Source Voltage (Vdss), which defines the maximum voltage the transistor can handle; and Gate Charge (Qg) (Max) @ Vgs, which affects switching speed and efficiency. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.

Part & Mfr

Total Stock

Pricing & RFQ

AEC Qualified

AEC-Q101

AEC-Q101 Qualified

Automotive Grade

Automotive Qualification

Avalanche Current

Avalanche Current (Ias)

Avalanche Current (Maximum @ L=0.1 mH)

Avalanche Current, Single Pulse

Avalanche Energy

Avalanche Energy (EAS)

Avalanche Energy (Maximum)

Avalanche Energy (Single Pulse)

Body Diode Continuous Current

Body Diode Forward Current

Body Diode Forward Current (Maximum)

Body Diode Forward Voltage

Body Diode Forward Voltage (VF(s-s))

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

Breakdown Voltage Temp. Coefficient

Breakdown Voltage Temperature Coefficient

Case

Case / Package

Case Code

Case Material

Channel Temperature

Configuration

Continuous Body Diode Forward Current

Continuous Drain Current

Continuous Drain Current (@ N-Channel, TA=+25 °C)

Continuous Drain Current (@ P-Channel, TA=+25 °C)

Continuous Drain Current (@ TA=100 °C)

Continuous Drain Current (ID) (Maximum @ TA=70 °C)

Continuous Drain Current (ID) @ TA=25°C

Continuous Drain Current (Id)

Continuous Drain Current (Id) (Maximum @ Tc=25 °C)

Continuous Drain Current (Maximum @ 25 C)

Continuous Drain Current (Maximum @ P-Channel)

Continuous Drain Current (Maximum @ P-Channel, Steady State, TA=+25 °C)

Continuous Drain Current (Maximum @ P-Channel, TA=25 °C)

Continuous Drain Current (Maximum @ TA = +25 °C, VGS = -10 V, Steady State)

Continuous Drain Current (Maximum @ TA = +25 °C, VGS = 4.5 V, steady state)

Continuous Drain Current (Maximum @ TA = +25 °C, VGS = 5 V)

Continuous Drain Current (Maximum @ TA = +70 °C, VGS = -4.5 V)

Continuous Drain Current (Maximum @ TA = +70 °C, VGS = 10 V)

Continuous Drain Current (Maximum @ TA = +85 °C)

Continuous Drain Current (Maximum @ TA = 25 °C (Based on R/C 0113 JA)

Continuous Drain Current (Maximum @ TA = 25 °C (Based on R/C 0113 JL)

Continuous Drain Current (Maximum @ TA = 25 °C (Note 2)

Continuous Drain Current (Maximum @ TA = 25 °C, Note 1)

Continuous Drain Current (Maximum @ TA = 25 °C, R/C 0113 JA (Note 1)

Continuous Drain Current (Maximum @ TA = 25 °C, R/C 0113 JA (Note 2)

Continuous Drain Current (Maximum @ TA = 25 °C, VGS = -4.5 V)

Continuous Drain Current (Maximum @ TA = 70 °C, R/C 0113 JA (Note 1)

Continuous Drain Current (Maximum @ TA = 70 °C, R/C 0113 JA (Note 2)

Continuous Drain Current (Maximum @ TA = 85 °C (Based on R/C 0113 JA)

Continuous Drain Current (Maximum @ TA = 85 °C (Based on R/C 0113 JL)

Continuous Drain Current (Maximum @ TA = 85 °C (Note 1)

Continuous Drain Current (Maximum @ TA = 85 °C (Note 2)

Continuous Drain Current (Maximum @ TA=+100 °C, Steady State)

Continuous Drain Current (Maximum @ TA=+25 °C, VGS=-10 V)

Continuous Drain Current (Maximum @ TA=+25 °C, t<10 s)

Continuous Drain Current (Maximum @ TA=100 °C)

Continuous Drain Current (Maximum @ TA=25 °C)

Continuous Drain Current (Maximum @ TA=25 °C, P-Channel)

Continuous Drain Current (Maximum @ TA=70 °C)

Continuous Drain Current (Maximum @ TA=70 °C, VGS=10 V, Steady State)

Continuous Drain Current (Maximum @ T_A=25 °C)

Continuous Drain Current (Maximum @ T_A=70 °C)

Continuous Drain Current (Maximum @ T_A=70 °C, V_GS=10 V)

Continuous Drain Current (Maximum @ Ta)

Continuous Drain Current (Maximum @ Tc = +70 °C, Vgs = -10 V)

Continuous Drain Current (Maximum @ Tc = 100 °C, Vgs = -10 V)

Continuous Drain Current (Maximum @ Tc = 25 °C, Vgs = -10 V)

Continuous Drain Current (Maximum @ Tc)

Continuous Drain Current (Maximum @ Tc=100 °C)

Continuous Drain Current (Maximum @ Tc=25 °C)

Continuous Drain Current (Maximum @ Tmb = 100 °C)

Continuous Drain Current (Maximum @ Tmb = 25 °C)

Continuous Drain Current (Maximum @ VGS = 4.5 V)

Continuous Drain Current (Maximum @ VGS=-2.5 V, TA=25 °C)

Continuous Drain Current (Maximum @ VGS=4.5 V, TA=+70 °C)

Continuous Drain Current (Maximum @ VGS=4.5 V, TA=25 °C)

Continuous Drain Current (Maximum @ Vgs=-4.5 V, Ta=+70 °C, steady state)

Continuous Drain Current (Maximum @ t ≤ 5 s, TA = 25 °C)

Continuous Drain Current (Maximum @ t ≤ 5 s, TA = 25 °C, Note 1)

Continuous Drain Current (Maximum)

Continuous Drain Current (Nominal @ N-Channel, TA=25 °C)

Continuous Drain Current (Nominal @ P-Channel, TA=25 °C)

Continuous Drain Current (Nominal @ Ta=70 °C)

Continuous Drain Current (Nominal @ Tc=100 °C, VGS=10 V)

Continuous Drain Current (Nominal @ VGS=10 V, TA=+25 °C)

Continuous Drain Current (TA = 25 °C)

Continuous Drain Current (TC = 70 °C)

Continuous Drain Current (Typical @ TA = 25 °C (Based on R/C 0113 JA)

Continuous Drain Current (Typical @ TA = 25 °C (Based on R/C 0113 JL)

Continuous Drain Current (Typical @ TA = 25 °C)

Continuous Drain Current (Typical @ TA = 85 °C (Based on R/C 0113 JA)

Continuous Drain Current (Typical @ TA = 85 °C (Based on R/C 0113 JL)

Continuous Drain Current (Typical @ TA = 85 °C)

Continuous Drain Current @ TC = 80°C (TJ = 175°C)

Continuous Source Current (Body Diode)

Continuous source current

Creepage Distance

Current

Current - Continuous Drain (Id) @ 25°C

Current Drain (Maximum @ Tc)

Current Drain Continuous (Maximum @ TA = 25 °C)

Current Drain Continuous (Maximum @ TC = 100 °C)

Current Drain Continuous (Maximum @ TC = 25 °C)

Current Drain Continuous (Maximum @ Ta = 100 °C)

Current Rating (Maximum @ Tc)

Cutoff Voltage

Diode Continuous Forward Current

Diode Continuous Forward Current (Is)

Diode Forward Voltage

Diode Forward Voltage (Q1)

Diode Forward Voltage (VSD)

Diode Pulse Current

Diode Pulse Current (IS,pulse)

Diode Reverse Recovery Charge

Drain Current

Drain Current (@ Channel 2)

Drain Current (@ P-Channel)

Drain Current (Continuous)

Drain Current (Continuous) (@ P-Channel)

Drain Current (Continuous) (Maximum @ Q 2 (P-Channel) @ TA=+25 °C)

Drain Current (Continuous) (Maximum @ Ta=70 °C)

Drain Current (DC)

Drain Current (Id)

Drain Current (Maximum @ P-Channel)

Drain Current (Maximum @ Q 2 P-Channel)

Drain Current (Maximum @ TA=+85 °C)

Drain Current (Maximum @ TA=70 °C)

Drain Current (Maximum @ Ta = +25 °C)

Drain Current (Maximum @ Ta = 100 °C)

Drain Current (Maximum @ Tc=100 °C)

Drain Current (Maximum @ Tc=25 °C)

Drain Current (Maximum @ VGS = -4.5 V ; Tamb = 25 °C ; t ≤ 5 s)

Drain Current (Maximum @ VGS = -4.5 V; Tamb = 100 °C)

Drain Current (Maximum @ VGS = -4.5 V; Tamb = 25 °C)

Drain Current (Maximum @ VGS = 10 V; Tamb = 100 °C)

Drain Current (Maximum @ VGS = 10 V; Tamb = 25 °C)

Drain Current (Maximum @ VGS = 4.5 V, TA = +25 °C)

Drain Current (Maximum @ VGS = 4.5 V; Tamb = 25 °C [1])

Drain Current (Maximum @ VGS = 5 V; Tmb = 100 °C)

Drain Current (Maximum @ VGS = 5 V; Tmb = 25 °C)

Drain Current (Maximum @ Vgs=-2.5 V)

Drain Current (Maximum @ pulsed)

Drain Current (Maximum)

Drain Current (Nominal @ Ta=25 °C)

Drain Current (Nominal)

Drain Current (Peak)

Drain Current (Pulse)

Drain Current (Unspecified condition)

Drain Current - Continuous (@ TA = 25 °C, Q 2)

Drain Current - Continuous (Maximum @ P-Channel)

Drain Current - Continuous (Maximum @ Q 2, Ta=25 °C)

Drain Current - Continuous (Maximum @ Q 2, Tc=25 °C)

Drain Current - Pulsed (Maximum)

Drain Current - Single Pulse

Drain Current Continuous (Maximum @ N-Channel)

Drain Current Continuous (Maximum @ TA = 70 °C, VGS = -4.5 V)

Drain Current Continuous (Maximum @ TA=25 °C, VGS=-4.5 V)

Drain Current Continuous (Maximum @ Ta=25 °C)

Drain Current Continuous (Maximum @ Tc=25 °C)

Drain Current Pulse (PW≤10μs, duty cycle≤1%)

Drain Current Pulsed (Maximum @ N-Channel)

Drain Current Pulsed (Maximum @ P-Channel)

Drain Current, Pulsed

Drain Source On Resistance (Maximum @ Id = 100 mA, Vgs = 2.5 V)

Drain Source On Resistance (Maximum @ VGS=2.5 V, ID=3.8 A)

Drain Source On Resistance (Maximum @ VGS=2.7 V)

Drain Source On Resistance (Maximum @ VGS=4.5 V)

Drain Source On Resistance (Maximum @ Vgs = 10 V)

Drain Source On Resistance (Maximum @ Vgs=2.5 V)

Drain Source On Resistance (Maximum @ Vgs=5 V)

Drain Source On Resistance (Typical/Maximum @ VGS = -4.5 V, ID = -5.5 A)

Drain Source On Resistance (Typical/Maximum @ VGS = 5 V; ID = 5 A; Tj = 25 °C)

Drain Source On Resistance (Typical/Maximum @ VGS=2.5 V, ID=5 A)

Drain Source On Resistance (Typical/Maximum @ VGS=4.5 V, ID=7 A)

Drain Source Voltage (Maximum @ Q 2)

Drain To Source Breakdown Voltage (Minimum @ N-Ch, VGS = 0 V, ID = 250 µA)

Drain To Source Breakdown Voltage (Minimum @ P-Ch, ID = -250 µA)

Drain To Source Breakdown Voltage (Minimum/Maximum @ VGS = 0 V, ID = -250 /C 0109 A)

Drain To Source Breakdown Voltage (Minimum/Maximum @ VGS = 0 V, ID = -250 µA)

Drain To Source On Resistance (Maximum @ VGS = 1.5 V, ID = 10 mA)

Drain To Source On Resistance (Maximum @ VGS = 1.8 V, ID = 20 mA)

Drain To Source On Resistance (Maximum @ VGS = 2.5 V, ID = 50 mA)

Drain To Source On Resistance (Maximum @ Vgs = 2.5 V)

Drain To Source On Resistance (Maximum @ Vgs=4.5 V)

Drain To Source On Resistance (Typical/Maximum @ VGS = 4.0 V, ID = 10 mA)

Drain To Source On Resistance (Typical/Maximum @ VGS = 4.5 V, ID = 0.63 A)

Drain To Source Voltage (Maximum @ Q 2 P-Channel)

Drain to Source Leakage Current

Drain to Source On Resistance (Maximum @ VGS=-4.5 V, ID=-6.8 A)

Drain to Source Voltage (@ Q 2 P-Channel)

Drain to Source Voltage (Vds)

Drain to Source Voltage (Vdss)

Drain-Gate Voltage (Vdgr)

Drain-Source Breakdown Voltage

Drain-Source Breakdown Voltage (BVDSS)

Drain-Source Breakdown Voltage (Maximum @ P-Channel)

Drain-Source Breakdown Voltage (Min)

Drain-Source Breakdown Voltage (Minimum @ P-Channel)

Drain-Source Breakdown Voltage (V(BR)DSS)

Drain-Source Breakdown Voltage Temperature Coefficient

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage (VSD)

Drain-Source On Resistance (Maximum @ VGS=-4.5 V, P-Channel)

Drain-Source On Resistance (Maximum @ VGS=4.5 V, N-Channel)

Drain-Source On-Resistance (@ N-Channel, VGS=10 V)

Drain-Source On-Resistance (Maximum @ ID=5.1 A, VGS=4.5 V)

Drain-Source On-Resistance (Maximum @ VGS = -1.5 V, ID = -2.1 A)

Drain-Source On-Resistance (Maximum @ VGS = -2.5 V, ID = -3.1 A)

Drain-Source On-Resistance (Maximum @ VGS=1.8 V)

Drain-Source On-Resistance (Maximum @ Vgs=-2.5 V, Id=-2.9 A)

Drain-Source On-Resistance (Maximum @ Vgs=-4.5 V, Id=-4.5 A)

Drain-Source On-Resistance (Maximum @ Vgs=4.5 V, Id=10 A)

Drain-Source On-Resistance (Rds(on)) (Maximum @ Vgs = 4.5 V)

Drain-Source On-Resistance (Typical @ VGS = -2.5 V)

Drain-Source On-Resistance (Typical @ Vgs=10 V)

Drain-Source On-Resistance (Typical @ Vgs=4.5 V)

Drain-Source On-Resistance (Typical)

Drain-Source On-Resistance (Typical/Maximum @ VGS=10 V, ID=3 A, TJ=125 °C)

Drain-Source On-Resistance (Typical/Maximum @ VGS=10 V, ID=7 A)

Drain-Source On-Resistance (Typical/Maximum @ VGS=2.5 V, ID=3.3 A)

Drain-Source On-Resistance (Typical/Maximum @ VGS=4.5 V, ID=6 A)

Drain-Source On-Resistance (Typical/Maximum @ Vgs=4.5 V, Id=5 A)

Drain-Source On-State Resistance

Drain-Source On-State Resistance (Maximum @ VGS=4.5 V, ID=200 mA)

Drain-Source Voltage (@ P-Channel)

Drain-Source Voltage (Maximum @ P-Channel)

Drain-Source Voltage (Maximum @ Q 1 N-channel)

Drain-Source Voltage (Maximum @ Q 2 P-Channel)

Drain-Source Voltage (Maximum)

Drain-Source Voltage (Nominal @ P-Channel)

Drain-Source Voltage (VDS)

Drain-Source Voltage (Vdss)

Drain-source voltage

Drain-to-Source Breakdown Voltage (Minimum @ Id=1 mA, Vgs=0 V)

Drain-to-Source Breakdown Voltage (V(BR)DSS)

Drain-to-Source Breakdown Voltage Temperature Coefficient

Drain-to-Source Voltage

Drain-to-Source Voltage (Maximum @ N-channel)

Drain-to-Source Voltage (Maximum @ P-channel)

Drain-to-Source Voltage (Maximum)

Drain-to-source breakdown voltage

ESD Class

ESD Protected

ESD Protected Gate

ESD Protection

ESD Protection (HBM)

ESD Protection Level

ESD Protection Level (HBM)

ESD Protection Voltage

ESD Rating

ESD Rating (HBM)

ESD Rating (Human Body Model)

Efficiency

FET Feature

FET Type

Fall Time

Fall Time (tf)

Features

Flammability Rating

Forward Diode Voltage

Forward Source-to-Source Voltage

Forward Transconductance

Forward Transconductance (Typical)

Forward Transconductance (gfs)

Forward Transfer Admittance

Gate Body Leakage Current

Gate Charge

Gate Charge (Maximum @ -4.5 V)

Gate Charge (Maximum @ 10 V)

Gate Charge (Maximum @ Q 2, Vgs=10 V)

Gate Charge (Maximum @ Vgs = 10 V)

Gate Charge (Qg)

Gate Charge (Qg) (Max)

Gate Charge (Qg) (Max) @ Vgs

Gate Charge (Typical)

Gate Charge (Typical/Maximum @ Vgs=10 V)

Gate Charge (Typical/Maximum @ Vgs=4.5 V)

Gate Charge Gate to Drain

Gate Charge Qg (Maximum @ 10 V)

Gate Charge Total (Typical)

Gate ESD Protection

Gate Plateau Voltage (Vplateau)

Gate Resistance

Gate Resistance (Rg)

Gate Source Leakage Current (Maximum @ Vgs = -20 V)

Gate Source Voltage (Minimum/Maximum @ Tj = 25 °C)

Gate Source Voltage (Minimum/Maximum)

Gate Threshold Temperature Coefficient

Gate Threshold Temperature Drift

Gate Threshold Voltage

Gate Threshold Voltage (Maximum @ ID = -250 µA)

Gate Threshold Voltage (Maximum @ Q 2, Id = 1 mA)

Gate Threshold Voltage (Maximum @ VDS = VGS, ID = -250 µA)

Gate Threshold Voltage (Minimum/Maximum @ Id=250 µA)

Gate Threshold Voltage (Minimum/Maximum @ VGS = VDS, ID = 250 /C 0109 A)

Gate Threshold Voltage (Minimum/Maximum @ Vds = Vgs, Id = 250 µA)

Gate Threshold Voltage (Minimum/Maximum @ Vgs = Vds, Id = 250 µA)

Gate Threshold Voltage (Minimum/Typical/Maximum @ ID = 250 µA)

Gate Threshold Voltage (Minimum/Typical/Maximum @ VDS=VGS, ID=250 µA, Q 2)

Gate Threshold Voltage (Minimum/Typical/Maximum @ VGS = VDS, ID = -250 /C 0109 A)

Gate Threshold Voltage (Minimum/Typical/Maximum @ Vds=Vgs, Id=250 µA)

Gate Threshold Voltage (Minimum/Typical/Maximum @ Vgs = Vds, Id = 250 µA)

Gate Threshold Voltage (Typical)

Gate Threshold Voltage (Typical/Maximum @ Id=250 µA)

Gate Threshold Voltage (Typical/Maximum @ Vds=Vgs, Id=250 µA)

Gate Threshold Voltage (Vgs(th))

Gate Threshold Voltage (Vgs(th)) (Max) @ Id

Gate Threshold Voltage (Vgs(th)) (Typical)

Gate Threshold Voltage Coefficient

Gate Threshold Voltage Temperature Coefficient

Gate To Source Leakage Current (Maximum @ VDS = 0 V, VGS = ±12 V)

Gate To Source Leakage Current (Maximum @ VDS = 0 V, VGS = ±4.5 V)

Gate To Source Voltage (@ Continuous)

Gate To Source Voltage (Minimum/Maximum @ Tj = 25 °C)

Gate To Source Voltage (Minimum/Maximum)

Gate plateau voltage

Gate to Drain Charge (Miller)

Gate to Drain Charge (Qgd) (Typical)

Gate to Source Charge (Qgs) (Typical)

Gate to Source Leakage Current (Maximum @ VGS = ±20 V)

Gate to Source Voltage (Vgs(th))

Gate to Source Voltage (Vgs)

Gate to Source Voltage (Vgs) Continuous

Gate to Source Voltage (Vgss)

Gate-Body Leakage

Gate-Body Leakage (Max)

Gate-Drain Charge

Gate-Drain Charge (Qgd)

Gate-Drain Charge (Qgd) Typical

Gate-Drain Charge (Typical)

Gate-Source Charge

Gate-Source Charge (Qgs)

Gate-Source Charge (Qgs) Typical

Gate-Source ESD Rating (HBM)

Gate-Source Leakage

Gate-Source Leakage (IGSS)

Gate-Source Leakage Current

Gate-Source Leakage Current (IGSS)

Gate-Source Threshold Voltage

Gate-Source Voltage

Gate-Source Voltage (Continuous)

Gate-Source Voltage (Max)

Gate-Source Voltage (Maximum @ Q 1)

Gate-Source Voltage (Maximum @ Q 2)

Gate-Source Voltage (Maximum)

Gate-Source Voltage (Vgs max)

Gate-Source Voltage (Vgs)

Gate-Source Voltage (Vgss)

Gate-to-Drain Charge

Gate-to-Drain Charge (Qgd)

Gate-to-Drain Miller Charge

Gate-to-Source Charge

Gate-to-Source Charge (Qgs)

Gate-to-Source Leakage Current

Gate-to-Source Leakage Current (IGSS)

Gate-to-Source Voltage

Gate-to-Source Voltage (Max)

Gate-to-Source Voltage (Maximum)

Gate-to-Source Voltage (Vgs) Max

Green Device

Halogen Free

Height

Height (Max)

ID (Maximum @ TC = 25 °C)

Id (Nominal @ Tc=25 °C)

Industrial Grade

Input Capacitance

Input Capacitance (Ciss)

Input Capacitance (Ciss) (Max)

Input Capacitance (Ciss) (Max) @ Vds

Input Capacitance (Maximum @ 15 V)

Input Capacitance (Maximum @ Vds=-10 V)

Input Capacitance (Maximum @ Vds=15 V)

Input Capacitance (Typical @ VDS = -15 V, VGS = 0 V, f = 1.0 MHz)

Input Capacitance (Typical @ VDS=15 V, VGS=0 V, f=1 MHz)

Input Capacitance (Typical/Maximum @ Vds=15 V, f=1 MHz)

Internal Gate Resistance

Internal Gate Resistance (Typical)

Isolation Test Voltage

Junction Temperature

Junction Temperature Range

Junction To Ambient Thermal Resistance (@ Steady State (Note 1)

Junction To Ambient Thermal Resistance (@ t = 5 s)

Junction To Ambient Thermal Resistance (Maximum @ Steady State (Note 1)

Junction To Ambient Thermal Resistance (Maximum @ Steady State (Note 1, 3)

Junction To Ambient Thermal Resistance (Maximum @ Steady State (Note 2)

Junction To Ambient Thermal Resistance (Maximum @ Steady State (Note 2, 3)

Junction To Ambient Thermal Resistance (Maximum @ Steady State (Note 3)

Junction To Ambient Thermal Resistance (Maximum @ Steady State Min Pad (Note 4)

Junction To Ambient Thermal Resistance (Maximum @ t = 5 s (Note 3)

Junction To Ambient Thermal Resistance (Maximum @ t ≤ 10 s (Note 1)

Junction To Ambient Thermal Resistance (Maximum @ t ≤ 5 s)

Junction To Ambient Thermal Resistance (Typical @ t 5 s)

Junction To Ambient Thermal Resistance (Typical/Maximum @ Steady-State)

Junction To Lead Thermal Resistance (Typical/Maximum @ Steady State)

Junction and Storage Temperature Range

Junction to Ambient Thermal Resistance

Junction to Ambient Thermal Resistance (RθJA)

Junction to Case Thermal Resistance

Junction to Case Thermal Resistance (Maximum)

Junction to Lead Thermal Resistance

Junction-to-Ambient Thermal Resistance (Maximum @ Steady-State)

Junction-to-Ambient Thermal Resistance (Maximum)

Junction-to-Ambient Thermal Resistance (Steady State)

Junction-to-Ambient Thermal Resistance (Typical @ Steady-State)

Junction-to-Case Thermal Resistance (RθJC)

Junction-to-Drain Lead Thermal Resistance

Lead Finish

Lead Pitch

Lead Spacing

Lead Style

Lead Temperature For Soldering (1/8″ from case for 10 s)

Lead Temperature Soldering Reflow

Lead Temperature for Soldering

Lead Temperature for Soldering Purposes

Linear Derating Factor

Logic Level

Logic Level Gate

MSL (Moisture Sensitivity Level)

Marking

Maximum Body-Diode Continuous Current

Maximum Continuous Body Diode Forward Current

Maximum Junction-to-Ambient Thermal Resistance

Maximum Lead Temperature for Soldering

Maximum Lead Temperature for Soldering Purposes

Maximum Operating Junction Temperature

Maximum Power Dissipation @ TC = 80°C (TJ = 175°C)

Maximum power dissipation

Medical Grade

Minimum Operating Junction Temperature

Minimum Order Quantity

Module Operating Junction Temperature

Mounting Type

Negative Threshold Temperature Coefficient

Number of Channels

Number of Elements

Number of Leads

Number of Pins

Offset Voltage

On Resistance (Maximum @ 10 A, 10 V)

On Resistance (Maximum @ VGS=2.5 V)

On Resistance (Maximum @ Vgs=4.5 V)

On-Resistance (Rds On)

On-State Drain Current

On-State Drain Current (Id(on))

Operating Junction And Storage Temperature (Minimum/Maximum)

Operating Junction Temperature

Operating Junction Temperature Range

Operating Junction and Storage Temperature

Operating Junction and Storage Temperature (Tj, Tstg)

Operating Junction and Storage Temperature Range

Operating Temperature

Operating Temperature (Minimum/Maximum)

Operating Temperature (TJ)

Operating Temperature (Unspecified condition)

Operating Temperature - Maximum

Operating and Storage Junction Temperature Range

Operating and Storage Temperature Range

Output Capacitance

Output Capacitance (Coss)

Output Capacitance (Coss) (Typ)

Output Capacitance (Max)

Output Capacitance (Typical @ VDS=15 V, VGS=0 V, F=1 MHz)

Output Capacitance (Typical)

Output Capacitance (Typical/Maximum @ VDS=-15 V, f=1 MHz)

Package / Case

Package / Case Code

Package Area

Package Code

Package Description

Package Dimensions

Package Height

Package Material

Package Name

Package Size

Package Type

Package Weight

Packaging Method

Packaging Type

Packing

Packing Type

Pb-Free

Pd (Maximum @ Single Operation, Note 1 A)

Pd (Maximum @ Ta=25 °C)

Peak Diode Recovery dv/dt

Peak Drain Current

Peak Drain Current (IDM)

Pitch

Ploss Current

Polarity

Power

Power Dissipation

Power Dissipation (@ Dual Operation)

Power Dissipation (@ Q 2, TA=25 °C (Note 1 d)

Power Dissipation (@ Single Operation, Note 1 A)

Power Dissipation (@ Single Operation, Note 1 b)

Power Dissipation (@ TA = 100 °C)

Power Dissipation (@ Tc=100 °C)

Power Dissipation (Max)

Power Dissipation (Maximum @ Dual operation)

Power Dissipation (Maximum @ Dual operation, Note 1 c)

Power Dissipation (Maximum @ Note 1 A)

Power Dissipation (Maximum @ Q 2 @ Tc=25 °C)

Power Dissipation (Maximum @ Single operation (Note 1 A)

Power Dissipation (Maximum @ Single operation)

Power Dissipation (Maximum @ Single operation, Note 1 b)

Power Dissipation (Maximum @ Single operation, Note 1 c)

Power Dissipation (Maximum @ Steady State, TA = 25 °C, Note 1)

Power Dissipation (Maximum @ Steady state, TA = 25 °C)

Power Dissipation (Maximum @ TA = 25 °C (Based on R/C 0113 JA)

Power Dissipation (Maximum @ TA = 25 °C (Based on R/C 0113 JL)

Power Dissipation (Maximum @ TA = 25 °C, Note 1 b)

Power Dissipation (Maximum @ TA = 25 °C, Note 1)

Power Dissipation (Maximum @ TA = 25 °C, Note 2)

Power Dissipation (Maximum @ TA = 25 °C, R/C 0113 JA (Note 1)

Power Dissipation (Maximum @ TA = 25 °C, R/C 0113 JA (Note 2)

Power Dissipation (Maximum @ TA = 85 °C (Based on R/C 0113 JA)

Power Dissipation (Maximum @ TA = 85 °C (Based on R/C 0113 JL)

Power Dissipation (Maximum @ TA = 85 °C)

Power Dissipation (Maximum @ TA=25 °C, Note 1 A)

Power Dissipation (Maximum @ TA=25 °C, Note 6)

Power Dissipation (Maximum @ TA=25 °C, Q 2)

Power Dissipation (Maximum @ TA=25 °C, t<5 s)

Power Dissipation (Maximum @ TA=70 °C)

Power Dissipation (Maximum @ TC(Bottom)=25 °C)

Power Dissipation (Maximum @ TC=100 °C)

Power Dissipation (Maximum @ TC=25 °C)

Power Dissipation (Maximum @ T_A = +25 °C)

Power Dissipation (Maximum @ T_A=70 °C)

Power Dissipation (Maximum @ Ta = 100 °C)

Power Dissipation (Maximum @ Ta)

Power Dissipation (Maximum @ Ta=25 °C, t≤10 s)

Power Dissipation (Maximum @ Tamb = 25 °C)

Power Dissipation (Maximum @ Tc)

Power Dissipation (Maximum @ Tc=70 °C)

Power Dissipation (Maximum @ Tj = 175 °C)

Power Dissipation (Maximum @ Tmb = 100 °C)

Power Dissipation (Maximum @ Tmb=25 °C)

Power Dissipation (Maximum @ t < 5 s, TA = 25 °C)

Power Dissipation (Maximum @ t ≤ 5 s, TA = 25 °C, Note 1)

Power Dissipation (Maximum @ t<5 s)

Power Dissipation (Maximum)

Power Dissipation (Maximum) @ TA=25°C

Power Dissipation (Nominal @ Ta = 25 °C)

Power Dissipation (PD)

Power Dissipation (PD) (Maximum @ TA = +70 °C)

Power Dissipation (TA=25°C)

Power Dissipation (Typical @ TA = 25 °C (Based on R/C 0113 JA)

Power Dissipation (Typical @ TA = 25 °C (Based on R/C 0113 JL)

Power Dissipation (Typical @ TA = 85 °C (Based on R/C 0113 JA)

Power Dissipation (Typical @ TA = 85 °C (Based on R/C 0113 JL)

Power Dissipation (Unspecified condition)

Power Dissipation Max (Maximum @ Tc = 80 °C (TJ = 175 °C)

Power Dissipation Max (Maximum @ Tj = 175 °C)

Power Loss

Power Loss (Ploss)

Pulsed Drain Current

Pulsed Drain Current (Idm)

Pulsed Drain Current (Max)

Pulsed Drain Current (Maximum @ 10 µs Pulse, Duty Cycle = 1%)

Pulsed Drain Current (Maximum @ N-Ch, tp = 10 /C 0109 s)

Pulsed Drain Current (Maximum @ N-Channel)

Pulsed Drain Current (Maximum @ P-Channel)

Pulsed Drain Current (Maximum @ Q 1)

Pulsed Drain Current (Maximum @ Q 1, Ta=25 °C)

Pulsed Drain Current (Maximum @ Q 2)

Pulsed Drain Current (Maximum @ Q 2, Ta=25 °C)

Pulsed Drain Current (Maximum @ TA=25 °C)

Pulsed Drain Current (Maximum)

Pulsed Drain Current (TJ = 175°C)

Pulsed Drain Current (one channel active)

Pulsed Drain Current (tp = 10 µs)

Pulsed Drain Current - Q1

Pulsed Source Current

Pulsed Source Current (Body Diode)

QGD (typ)

QGS (typ)

Qg (Typical/Maximum @ VGS=10 V)

Quantity Per Reel

Rds On (Max) @ Id, Vgs

Rds On (Maximum @ Id = 20 A, Vgs = 10 V)

Rds On (Maximum @ Id=11 A, Vgs=4.5 V)

Rds On (Maximum @ VGS = -1.8 V, P-Channel)

Rds On (Maximum @ VGS = -4.5 V, P-Channel)

Rds On (Maximum @ VGS = 1.8 V, N-Channel)

Rds On (Maximum @ VGS=10 V)

Rds On (Maximum @ VGS=4.5 V)

Rds On (Maximum @ Vgs = -2.5 V)

Rds On Max (Maximum @ 10 A, 10 V)

Rds On Max (Maximum @ 10 V)

Rds On Max (Maximum @ 20 A, 10 V)

Rds On Max (Maximum @ @ 4.5 V)

Rds(on) (Maximum @ 4.5 V)

Rds(on) (Maximum @ VGS = -4.5 V, ID = 5 A)

Rds(on) max.

Reel Quantity

Reel Size

Repetitive Avalanche Energy

Reverse Recovery Charge

Reverse Recovery Charge (Qrr)

Reverse Recovery Charge (Typical)

Reverse Recovery Time

Reverse Recovery Time (Typical)

Reverse Recovery Time (trr)

Reverse Transfer Capacitance

Reverse Transfer Capacitance (Crss)

Reverse Transfer Capacitance (Crss) (Typ)

Reverse Transfer Capacitance (Max)

Reverse Transfer Capacitance (Typical @ VDS=15 V, VGS=0 V, F=1 MHz)

Reverse Transfer Capacitance (Typical)

Reverse Transfer Capacitance (Typical/Maximum @ VDS=-15 V, f=1 MHz)

Rise Time

Rise Time (tr)

SVHC Present

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy (EAS)

Single Pulse Avalanche Energy (E_AS)

Single Pulse Avalanche Energy (Maximum)

Single Pulse Drain-to-Source Avalanche Energy

Single Pulse Drain-to-Source Avalanche Energy (EAS)

Single Pulsed Avalanche Energy

Solderability

Soldering Temperature

Source Current

Source Current (Body Diode)

Source Current (Body Diode) (Is)

Source Current (DC)

Source Current (Pulse)

Source Current (Source-Drain Diode)

Source Current Body Diode (Note 1)

Source-Drain Diode Forward Voltage

Source-Source Breakdown Voltage

Source-Source Voltage

Source-to-Source Breakdown Voltage

Source-to-Source Voltage

Standard Pack Quantity

Standard Package Qty

Standard Package Quantity

Standard Package Quantity (Tape/Reel)

Static Drain-Source On-Resistance (Maximum @ VGS=4.5 V, ID=5 A)

Storage Temperature

Storage Temperature (Minimum/Maximum)

Storage Temperature Range

Storage Temperature Range (TSTG)

Supplier Device Package

Supplier Package

Switching Frequency (Max)

System Efficiency

Tape & Reel

Tape & Reel Quantity

Tape Width

Tape and Reel

Tape and Reel Information

Technology

Terminal Finish

Terminals Finish

Termination

Termination Finish

Termination Style

Thermal Resistance

Thermal Resistance (Junction to Ambient) (Typical @ Steady State)

Thermal Resistance (Junction to Ambient) (Typical @ t ≤ 10 s)

Thermal Resistance (Junction-Ambient)

Thermal Resistance (RθJA)

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Case (Typical)

Thermal Resistance Junction Case (Maximum)

Thermal Resistance Junction To Ambient (Maximum @ Note 1 c)

Thermal Resistance Junction To Ambient (Maximum @ Note 1 d)

Thermal Resistance Junction To Ambient (Maximum @ Single Operation (Note 1 A)

Thermal Resistance Junction To Ambient (Maximum @ Single Operation (Note 1 b)

Thermal Resistance Junction To Case (Maximum)

Thermal Resistance Junction To Case (Nominal)

Thermal Resistance Junction to Ambient (RθJA)

Thermal Resistance Junction to Lead (RθJL)

Thermal Resistance Junction-Case

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Ambient (Typical/Maximum @ Steady-State)

Thermal Resistance Junction-to-Ambient (Typical/Maximum @ t≤10 s)

Thermal Resistance Junction-to-Case (RθJC)

Thermal Resistance Junction-to-Drain Lead

Thermal Resistance, Junction to Ambient (Maximum @ Dual operation (Note 1 c)

Thermal Resistance, Junction to Ambient (Maximum @ Dual operation (Note 1 d)

Thermal Resistance, Junction to Ambient (Maximum @ Note 5)

Thermal Resistance, Junction to Ambient (Maximum @ Note 6)

Thermal Resistance, Junction to Ambient (Maximum @ Steady state, Note 5)

Thermal Resistance, Junction to Ambient (Maximum @ Steady state, Note 6)

Thermal Resistance, Junction to Ambient (Maximum @ t<10 s, Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Nominal @ Q 1)

Thermal Resistance, Junction to Case (Nominal @ Q 2)

Thermal Resistance, Junction to Case (RthJC)

Thermal Resistance, Junction to Lead

Thermal Resistance, Junction-to-Ambient (@ Note 1 A)

Thermal Resistance, Junction-to-Ambient (@ Note 1 b)

Thermal Resistance, Junction-to-Ambient (Maximum @ Note 1 A)

Thermal Resistance, Junction-to-Ambient (Maximum @ Note 1 b)

Thermal Resistance, Junction-to-Ambient (Maximum @ Steady-State)

Thermal Resistance, Junction-to-Ambient (Maximum @ t ≤ 10 s)

Thermal Resistance, Junction-to-Ambient (Maximum)

Thermal Resistance, Junction-to-Ambient (Note 1)

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Ambient (Note 2)

Topology

Total Dissipation

Total Gate Charge

Total Power Dissipation

Total Power Dissipation (@ TA = 25 °C)

Total Power Dissipation (Maximum @ TA = 25 °C, Note 1)

Total Power Dissipation (Maximum @ TA = 25 °C, Note 2)

Total Power Dissipation (Maximum @ Tamb=25 °C)

Total Power Dissipation (Maximum @ Tsp = 25 °C)

Transconductance

Transistor Type

Turn-Off Delay Time

Turn-Off Delay Time (Max)

Turn-Off Delay Time (td(off))

Turn-Off Fall Time

Turn-Off Fall Time (tf)

Turn-On Delay Time

Turn-On Delay Time (Max)

Turn-On Delay Time (td(on))

Turn-On Rise Time

Turn-On Rise Time (tr)

Type

Typical Turn-Off Delay Time

Typical Turn-On Delay Time

VGS_th (Typical)

Vgs (Max)

Vgs(th) (Max)

Vgs(th) (Max) @ Id

Voltage

Voltage - Breakdown (Max)

Voltage Gate Source (Minimum/Maximum)

Weight

Zero Gate Voltage Drain Current

Zero Gate Voltage Drain Current (@ VGS = 0 V, VDS = 40 V, TJ = 125 °C)

Zero Gate Voltage Drain Current (@ Vgs = 0 V, Vds = 40 V, Tj = 25 °C)

Zero Gate Voltage Drain Current (Maximum @ TJ=55 °C)

Zero Gate Voltage Drain Current (Maximum @ VDS=-30 V, VGS=0 V)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = -16 V, TJ = 125 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = -16 V, TJ = 25 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 24 V, TJ = 125 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 24 V, TJ = 25 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 40 V, TJ = 125 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 40 V, TJ = 25 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 5 V, TJ = 25 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 5 V, TJ = 85 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 60 V, TJ = 125 °C)

Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 60 V, TJ = 25 °C)

Zero Gate Voltage Drain Current (Maximum @ Vds=-30 V, Vgs=0 V, Tj=55 °C)

Zero Gate Voltage Drain Current (Maximum @ Vds=20 V, Vgs=0 V, TJ=25 °C)

Zero Gate Voltage Drain Current (Maximum @ Vds=20 V, Vgs=0 V, TJ=55 °C)

Zero Gate Voltage Drain Current (Maximum @ Vds=24 V, Vgs=0 V)

Zero Gate Voltage Source Current

Zero-Gate-Voltage Drain Current (IDSS)

current (Maximum @ Tc)

power-dissipation (Maximum @ Note 1 b)

MCH6664-TL-W

On Semiconductor

36,000

Price on request

36,000

2 P-Channel (Dual)

1.5A

30V

Logic Level Gate

2.2nC @ 10V

82pF @ 10V

Surface Mount

150°C (TJ)

800mW

325mOhm @ 800mA, 10V

SC-88FL/MCPH6

MOSFET (Metal Oxide)

2.6V @ 1mA

FDMS001N025DSD

On Semiconductor

34,954

Price on request

34,954

2 N-Channel (Dual) Asymmetrical

19A (Ta), 69A (Tc), 38A (Ta), 165A (Tc)

25V

30nC @ 10V, 104nC @ 10V

1370pF @ 13V, 5105pF @ 13V

Surface Mount

-55°C ~ 150°C (TJ)

2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)

3.25mOhm @ 19A, 10V, 920µOhm @ 38A, 10V

8-PQFN (5x6)

MOSFET (Metal Oxide)

2.5V @ 320µA, 3V @ 1mA

NVMFD5489NLWFT1G

On Semiconductor

34,306

Across 2 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	31,500	-	-
Rayichip	2,806	-	-

Price on request

34,306

Distributor	Stock	MOQ	Country
Flip Electronics	31,500	-	-
Rayichip	2,806	-	-

2 N-Channel (Dual)

4.5A

60V

Logic Level Gate

12.4nC @ 10V

330pF @ 25V

Surface Mount

-55°C ~ 175°C (TJ)

65mOhm @ 15A, 10V

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET (Metal Oxide)

2.5V @ 250µA

DMN2024UVT-7

Diodes Incorporated

34,020

From Optech Co.,Limited

Price on request

34,020

Yes

2 N-Channel (Dual) Common Drain

7 A

7A (Ta)

20 V

7.1 nC

±10 V

Yes

647 pF

Gull Wing

Surface Mount

-55°C ~ 150°C

1 W

35 A

24 mOhm

3000

-55°C ~ 150°C

TSOT-23-6

Yes

MOSFET (Metal Oxide)

Matte Tin Annealed Over Copper Leadframe

900 mV

0.013 g

NVMD4N03R2G

On Semiconductor

32,500

Price on request

32,500

2 N-Channel (Dual)

30V

Logic Level Gate

16nC @ 10V

400pF @ 20V

Surface Mount

-55°C ~ 150°C (TJ)

60mOhm @ 4A, 10V

8-SOIC

MOSFET (Metal Oxide)

3V @ 250µA

FDMS3606AS

On Semiconductor

32,260

Price on request

32,260

2 N-Channel (Dual) Asymmetrical

13A, 27A

30V

Logic Level Gate

29nC @ 10V

1695pF @ 15V

Surface Mount

-55°C ~ 150°C (TJ)

8mOhm @ 13A, 10V

Power56

MOSFET (Metal Oxide)

2.7V @ 250µA

STS2DPF80

STMicroelectronics

31,332

From Optech Co.,Limited

Price on request

31,332

2 P-Channel (Dual)

80V

Logic Level Gate

20nC @ 10V

739pF @ 25V

Surface Mount

150°C (TJ)

2.5W

250mOhm @ 1A, 10V

8-SOIC

MOSFET (Metal Oxide)

4V @ 250µA

DMN2991UDJ-7A

Diodes Incorporated

31,020

From Optech Co.,Limited

Price on request

31,020

2 N-Channel (Dual)

520 mA

20 V

0.35 nC

Halogen Free

21.5 pF

Surface Mount

-55°C ~ 150°C

400 mW

990 mOhm

10000 pcs

SOT-963

Yes

MOSFET (Metal Oxide)

Matte Tin Annealed over Copper Leadframe

1 V

STS4DPF30L

STMicroelectronics

28,505

From Optech Co.,Limited

Price on request

28,505

2 P-Channel (Dual)

30V

16nC @ 5V

1350pF @ 25V

Surface Mount

-55°C ~ 150°C (TJ)

80mOhm @ 2A, 10V

8-SOIC

MOSFET (Metal Oxide)

1V @ 250µA

NVMFD5C668NLWFT1G

On Semiconductor

28,500

Price on request

28,500

FDMS1D2N03DSD

On Semiconductor

27,910

Price on request

27,910

2 N-Channel (Dual) Asymmetrical

19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)

30V

33nC @ 10V, 117nC @ 10V

1410pF @ 15V, 4860pF @ 15V

Surface Mount

-55°C ~ 150°C (TJ)

2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)

3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V

8-PQFN (5x6)

MOSFET (Metal Oxide)

2.5V @ 320µA, 3V @ 1mA

FDS9958

On Semiconductor

27,434

Across 3 distributors

Distributor	Stock	MOQ	Country
Components Technology Group, Inc.	3,222	-	-
Flip Electronics	22,500	-	-
Xingangxin	1,712	-	-

Price on request

27,434

Distributor	Stock	MOQ	Country
Components Technology Group, Inc.	3,222	-	-
Flip Electronics	22,500	-	-
Xingangxin	1,712	-	-

2 P-Channel (Dual)

2.9A

60V

Logic Level Gate

23nC @ 10V

1020pF @ 30V

Surface Mount

-55°C ~ 150°C (TJ)

900mW

105mOhm @ 2.9A, 10V

8-SOIC

MOSFET (Metal Oxide)

3V @ 250µA

FDS6930A

On Semiconductor

27,326

Across 6 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	2,420	-	-
Bristol Electronics	883	-	-
Hybrid Electronics	20	-	-
Optech Co.,Limited	7,529	-	-
Xingangxin	7,450	-	-
Smaxon Electronics	9,024	-	-

Price on request

27,326

Distributor	Stock	MOQ	Country
Flip Electronics	2,420	-	-
Bristol Electronics	883	-	-
Hybrid Electronics	20	-	-
Optech Co.,Limited	7,529	-	-
Xingangxin	7,450	-	-
Smaxon Electronics	9,024	-	-

2 N-Channel (Dual)

5.5A

30V

Logic Level Gate

7nC @ 5V

460pF @ 15V

Surface Mount

-55°C ~ 150°C (TJ)

900mW

40mOhm @ 5.5A, 10V

8-SOIC

MOSFET (Metal Oxide)

3V @ 250µA

NVMFWD024N06CT1G

On Semiconductor

27,000

Price on request

27,000

2 N-Channel (Dual)

8A (Ta), 24A (Tc)

60V

5.7nC @ 10V

333pF @ 30V

Surface Mount

-55°C ~ 175°C (TJ)

3.1W (Ta), 28W (Tc)

22.6mOhm @ 3A, 10V

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET (Metal Oxide)

4V @ 20µA

NVMFD6H846NLWFT1G

On Semiconductor

27,000

Price on request

27,000

2 N-Channel (Dual)

9.4A (Ta), 31A (Tc)

80V

17nC @ 10V

900pF @ 40V

Surface Mount

-55°C ~ 175°C (TJ)

3.2W (Ta), 34W (Tc)

15mOhm @ 5A, 10V

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET (Metal Oxide)

2V @ 21µA

STS4C3F60L

STMicroelectronics

25,868

From Optech Co.,Limited

Price on request

25,868

N and P-Channel

4A, 3A

60V

Logic Level Gate

20.4nC @ 4.5V

1030pF @ 25V

Surface Mount

-55°C ~ 150°C (TJ)

55mOhm @ 2A, 10V

8-SOIC

MOSFET (Metal Oxide)

1V @ 250µA

IPG20N06S4L14AATMA1

Infineon Technologies

25,253

From Smaxon Electronics

Price on request

25,253

2 N-Channel (Dual)

20A

60V

Logic Level Gate

39nC @ 10V

2890pF @ 25V

Surface Mount, Wettable Flank

-55°C ~ 175°C (TJ)

50W

13.7mOhm @ 17A, 10V

PG-TDSON-8-10

MOSFET (Metal Oxide)

2.2V @ 20µA

NDS9943

On Semiconductor

25,000

From Smaxon Electronics

Price on request

25,000

N and P-Channel

3A, 2.8A

20V

Logic Level Gate

27nC @ 10V

525pF @ 10V

Surface Mount

-55°C ~ 150°C (TJ)

900mW

125mOhm @ 3A, 10V

8-SOIC

MOSFET (Metal Oxide)

FDMA1023PZ-F106

On Semiconductor

24,670

Price on request

24,670

2 P-Channel (Dual)

3.7A (Ta)

20V

12nC @ 4.5V

655pF @ 10V

Surface Mount

-55°C ~ 150°C (TJ)

700mW (Ta)

72mOhm @ 3.7A, 4.5V

6-MicroFET (2x2)

MOSFET (Metal Oxide)

1V @ 250µA

MCH6613-TL-E

On Semiconductor

24,000

Price on request

24,000

N and P-Channel

350mA, 200mA

30V

Logic Level Gate

1.58nC @ 10V

7pF @ 10V

Surface Mount

150°C (TJ)

800mW

3.7Ohm @ 80mA, 4V

6-MCPH

MOSFET (Metal Oxide)

DMN2036UCB4-7

Diodes Incorporated

24,000

From Smaxon Electronics

Price on request

24,000

2 N-Channel (Dual) Common Drain

5 A

24 V

12.6 nC

0.5 V - 1.3 V

±12 V

Halogen and Antimony Free

Surface Mount

-55°C ~ 150°C (TJ)

Tape & Reel

1.45 W

30 A

3000

X2-WLB1616-4

MOSFET (Metal Oxide)

86.68 °C/W

NSTJD4001NT1G

On Semiconductor

24,000

Price on request

24,000

DMG6968UTS-13

Diodes Incorporated

23,305

Across 2 distributors

Distributor	Stock	MOQ	Country
Optech Co.,Limited	21,020	-	-
Smaxon Electronics	2,285	-	-

Price on request

23,305

Distributor	Stock	MOQ	Country
Optech Co.,Limited	21,020	-	-
Smaxon Electronics	2,285	-	-

Yes

Molded Plastic, Green Molding Compound

2 N-Channel (Dual) Common Drain

5.2 A

20 V

Logic Level Gate

8.8 nC

±12 V

Green Device

143 pF

0.65 mm

Gull Wing

Surface Mount

-55°C ~ 150°C

1 W

30 A

23 mΩ

-55°C ~ 150°C

8-TSSOP

Yes

MOSFET (Metal Oxide)

125 °C/W

950 mV

0.039 g

BSD223P

Infineon Technologies

23,255

From Optech Co.,Limited

Price on request

23,255

Yes

Qualified

Yes

1.4 mJ

2 P-Channel (Dual)

0.31 A

0.39 A

20 V

Logic Level Gate

0.62nC @ 4.5V

Yes

56pF @ 15V

45 pF / 56 pF

Surface Mount

-55°C to 150°C

21 pF / 26 pF

250 mW

1.56 A

1.2Ohm @ 390mA, 4.5V

17 pF / 22 pF

-55°C ~ 150°C

PG-SOT363-PO

Yes

MOSFET (Metal Oxide)

500 K/W

1.2V @ 1.5µA

NVMFWD030N06CT1G

On Semiconductor

22,500

Price on request

22,500

2 N-Channel (Dual)

7A (Ta), 19A (Tc)

60V

4.7nC @ 10V

255pF @ 30V

Surface Mount

-55°C ~ 175°C (TJ)

3.2W (Ta), 23W (Tc)

29.7mOhm @ 3A, 10V

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET (Metal Oxide)

4V @ 13µA

2SK3483-ZK-E1-AZ

Renesas

22,500

From Components Technology Group, Inc.

Price on request

22,500

N-Channel

Power MOSFET

AON5820

Alpha&Omega Semicondu Ctor

21,883

From Braun Electronic Components

Price on request

21,883

2 N-Channel (Dual) Common Drain

10A

20 V

Logic Level Gate

15nC @ 4.5V

1510pF @ 10V

Surface Mount

-55°C ~ 150°C (TJ)

1.7W

9.5mOhm @ 10A, 4.5V

-55.0°C ~ 150.0°C

6-DFN-EP (2x5)

MOSFET (Metal Oxide)

1V @ 250µA

TPC8407,LQ(S

Toshiba

21,660

From Optech Co.,Limited

Price on request

21,660

N and P-Channel

9A, 7.4A

30V

Logic Level Gate

17nC @ 10V

1190pF @ 10V

Surface Mount

150°C (TJ)

450mW

17mOhm @ 4.5A, 10V

8-SOP

MOSFET (Metal Oxide)

2.3V @ 100µA

NTMFD1D1N02X

On Semiconductor

21,449

Price on request

21,449

2 N-Channel (Dual)

14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)

25V

15nC @ 10V, 59nC @ 10V

1080pF @ 12V, 4265pF @ 12V

Surface Mount

-55°C ~ 150°C (TJ)

960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)

3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V

8-PQFN (5x6)

MOSFET (Metal Oxide)

2.1V @ 240µA, 2.1V @ 850µA

DMC1030UFDBQ-13

Diodes Incorporated

21,020

From Optech Co.,Limited

Price on request

21,020

Yes

Qualified

Yes

N and P-Channel Complementary

5.1 A

12 V

Yes

23.1 nC

Yes

1003 pF

Surface Mount

-55°C ~ 150°C (TJ)

1.36 W

34 mΩ

10000

U-DFN2020-6 (Type B)

Yes

MOSFET (Metal Oxide)

NiPdAu

1 V

0.0065 g

NVMJD015N06CLTWG

On Semiconductor

21,000

Price on request

21,000

2 N-Channel (Dual)

10.1A (Ta), 35A (Tc)

60V

9.4nC @ 10V

643pF @ 30V

Surface Mount

-55°C ~ 175°C (TJ)

3.1W (Ta), 37W (Tc)

14.4mOhm @ 17A, 10V

8-LFPAK

2.2V @ 25µA

MCH6662-TL-W

On Semiconductor

21,000

Price on request

21,000

2 N-Channel (Dual)

20V

Logic Level Gate, 1.8V Drive

1.8nC @ 4.5V

128pF @ 10V

Surface Mount

150°C (TJ)

800mW

160mOhm @ 1A, 4.5V

SC-88FL/MCPH6

MOSFET (Metal Oxide)

1.3V @ 1mA

NVMFD024N06CT1G

On Semiconductor

21,000

Price on request

21,000

2 N-Channel (Dual)

8A (Ta), 24A (Tc)

60V

5.7nC @ 10V

333pF @ 30V

Surface Mount

-55°C ~ 175°C (TJ)

3.1W (Ta), 28W (Tc)

22.6mOhm @ 3A, 10V

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET (Metal Oxide)

4V @ 20µA

NVMFD5873NLT1G

On Semiconductor

20,754

From Smaxon Electronics

Price on request

20,754

2 N-Channel (Dual)

10A

60V

Logic Level Gate

30.5nC @ 10V

1560pF @ 25V

Surface Mount

-55°C ~ 175°C (TJ)

3.1W

13mOhm @ 15A, 10V

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET (Metal Oxide)

2.5V @ 250µA

SP8M8FD5TB1

ROHM Semiconductor

20,190

From Smaxon Electronics

Price on request

20,190

N and P-Channel

6A (Ta), 4.5A (Ta)

30V

Logic Level Gate, 4V Drive

7.2nC @ 5V, 8.5nC @ 5V

520pF @ 10V, 850pF @ 10V

Surface Mount

150°C

2W (Ta)

30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V

8-SOP

MOSFET (Metal Oxide)

2.5V @ 1mA

NVMD6P02R2G

On Semiconductor

20,000

Price on request

20,000

2 P-Channel (Dual)

4.8A

20V

Logic Level Gate

35nC @ 4.5V

1700pF @ 16V

Surface Mount

750mW

33mOhm @ 6.2A, 4.5V

8-SOIC

MOSFET (Metal Oxide)

1.2V @ 250µA

FDS6900S

On Semiconductor

20,000

From Smaxon Electronics

Price on request

20,000

2 N-Channel (Dual)

6.9A (Ta), 8.2A (Ta)

30V

Logic Level Gate

11nC @ 5V, 17nC @ 5V

771pF @ 15V, 1238pF @ 15V

Surface Mount

-55°C ~ 150°C (TJ)

900mW (Ta)

30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V

8-SOIC

MOSFET (Metal Oxide)

3V @ 250µA, 3V @ 1mA

EFC4618R-P-TR

On Semiconductor

20,000

From Smaxon Electronics

Price on request

20,000

2 N-Channel (Dual) Common Drain

Logic Level Gate, 2.5V Drive

25.4 nC

Surface Mount

150°C (TJ)

1.6 W

EFCP1818-4CC-037

MOSFET (Metal Oxide)

ZXMN3G32DN8TA

Diodes Incorporated

19,400

Across 2 distributors

Distributor	Stock	MOQ	Country
PROSOFT ELECTRONICS	3,000	-	-
Smaxon Electronics	16,400	-	-

Price on request

19,400

Distributor	Stock	MOQ	Country
PROSOFT ELECTRONICS	3,000	-	-
Smaxon Electronics	16,400	-	-

2 N-Channel (Dual)

5.5A

30V

Logic Level Gate

10.5nC @ 10V

472pF @ 15V

Surface Mount

-55°C ~ 150°C (TJ)

1.8W

28mOhm @ 6A, 10V

8-SO

MOSFET (Metal Oxide)

3V @ 250µA

PMDPB55XP,115

Nexperia USA Inc.

19,020

From Optech Co.,Limited

Price on request

19,020

2 P-Channel (Dual)

3.4A

20V

Logic Level Gate

25nC @ 5V

785pF @ 10V

Surface Mount

-55°C ~ 150°C (TJ)

490mW

70mOhm @ 3.4A, 4.5V

6-HUSON (2x2)

MOSFET (Metal Oxide)

900mV @ 250µA

NTTBC070NP10M5L

On Semiconductor

19,000

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	1,000	-	-
Flip Electronics	18,000	-	-

Price on request

19,000

Distributor	Stock	MOQ	Country
Braun Electronic Components	1,000	-	-
Flip Electronics	18,000	-	-

N and P-Channel

3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)

100V

5.6nC @ 10V, 7.3nC @ 10V

252pF @ 50V, 256pF @ 50V

Surface Mount

-55°C ~ 150°C (TJ)

1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)

70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V

8-WDFN (3x3)

MOSFET (Metal Oxide)

3V @ 24µA, 4V @ 40µA

FDMS3600S

On Semiconductor

18,836

Across 4 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	12,885	-	-
Hybrid Electronics	2,745	-	-
Optech Co.,Limited	3,100	-	-
Smaxon Electronics	106	-	-

Price on request

18,836

Distributor	Stock	MOQ	Country
Flip Electronics	12,885	-	-
Hybrid Electronics	2,745	-	-
Optech Co.,Limited	3,100	-	-
Smaxon Electronics	106	-	-

FDS6892A

On Semiconductor

18,355

Across 5 distributors

Distributor	Stock	MOQ	Country
Components Technology Group, Inc.	12,500	-	-
Braun Electronic Components	850	-	-
Flip Electronics	2,435	-	-
Speed Components Ltd	2,500	-	-
Bristol Electronics	70	-	-

Price on request

18,355

Distributor	Stock	MOQ	Country
Components Technology Group, Inc.	12,500	-	-
Braun Electronic Components	850	-	-
Flip Electronics	2,435	-	-
Speed Components Ltd	2,500	-	-
Bristol Electronics	70	-	-

2 N-Channel (Dual)

7.5A

20V

Logic Level Gate

17nC @ 4.5V

1333pF @ 10V

Surface Mount

-55°C ~ 150°C (TJ)

900mW

18mOhm @ 7.5A, 4.5V

8-SOIC

MOSFET (Metal Oxide)

1.5V @ 250µA

NVMJD012N06CLTWG

On Semiconductor

18,000

Price on request

18,000

2 N-Channel (Dual)

11.5A (Ta), 42A (Tc)

60V

11.5nC @ 10V

792pF @ 25V

Surface Mount

-55°C ~ 175°C (TJ)

3.2W (Ta), 42W (Tc)

11.9mOhm @ 25A, 10V

8-LFPAK

MOSFET (Metal Oxide)

2.2V @ 30µA

ZXMP6A16DN8TC

Diodes Incorporated

17,500

From Smaxon Electronics

Price on request

17,500

2 P-Channel (Dual)

2.9A

60V

24.2nC @ 10V

1021pF @ 30V

Surface Mount

-55°C ~ 150°C (TJ)

1.25W

85mOhm @ 2.9A, 10V

8-SO

MOSFET (Metal Oxide)

1V @ 250µA (Min)

DMP2066LSD-13

Diodes Incorporated

17,340

Across 2 distributors

Distributor	Stock	MOQ	Country
Optech Co.,Limited	2,340	-	-
PROSOFT ELECTRONICS	15,000	-	-

Price on request

17,340

Distributor	Stock	MOQ	Country
Optech Co.,Limited	2,340	-	-
PROSOFT ELECTRONICS	15,000	-	-

Yes

Qualified to AEC-Q101 Standards

Molded Plastic, "Green" Molding Compound

2 P-Channel (Dual)

5.8A

-5.8 A

-20 V

Logic Level Gate

10.1 nC @ -4.5V

±12 V

Yes

820 pF @ -15V

Surface Mount

-55°C ~ 150°C (TJ)

2 W

-20 A

40 mΩ

Not Present

8-SO

2500/Tape & Reel

MOSFET (Metal Oxide)

Matte Tin Annealed over Copper Lead Frame

Solderable per MIL-STD-202, Method 208

62.5 °C/W

-1.2 V @ -250µA

0.072 g

FDN5632N

On Semiconductor

16,864

Price on request

16,864

NVMFWD020N06CT1G

On Semiconductor

16,500

Price on request

16,500

2 N-Channel (Dual)

8A (Ta), 27A (Tc)

60V

5.8nC @ 10V

355pF @ 30V

Surface Mount

-55°C ~ 175°C (TJ)

3.1W (Ta), 31W (Tc)

20.3mOhm @ 4A, 10V

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET (Metal Oxide)

4V @ 20µA

NTMD6N03R2G

On Semiconductor

16,260

Across 2 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	15,000	-	-
Smaxon Electronics	1,260	-	-

Price on request

16,260

Distributor	Stock	MOQ	Country
Flip Electronics	15,000	-	-
Smaxon Electronics	1,260	-	-

2 N-Channel (Dual)

30V

Logic Level Gate

30nC @ 10V

950pF @ 24V

Surface Mount

-55°C ~ 150°C (TJ)

1.29W

32mOhm @ 6A, 10V

8-SOIC

MOSFET (Metal Oxide)

2.5V @ 250µA

NVMFD6H840NLWFT1G

On Semiconductor

15,800

Price on request

15,800

2 N-Channel (Dual)

14A (Ta), 74A (Tc)

80V

32nC @ 10V

2002pF @ 40V

Surface Mount

-55°C ~ 175°C (TJ)

6.9mOhm @ 20A, 10V

8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET (Metal Oxide)

2V @ 96µA

Showing 151-200 of 3,467 products

About Transistors - FETs, MOSFETs - Arrays

Transistors - FETs, MOSFETs - Arrays are essential components in modern electronic designs, offering versatility and efficiency in power management and signal processing. These discrete semiconductor products are available in various configurations, including GaNFETs, Power MOSFETs, and Silicon Carbide (SiC) types, catering to a wide range of applications from industrial power management to new product design and prototyping.

When selecting FETs and MOSFETs, it is crucial to consider important attributes such as Configuration, Current ratings, and Drain to Source Voltage (Vdss). Additionally, features like Gate Charge (Qg) and Input Capacitance (Ciss) play a significant role in determining the suitability of a component for specific applications. Understanding these specifications will help you make informed decisions when sourcing these components.

Applications for Transistors - FETs, MOSFETs - Arrays include production electronics assembly, maintenance and field replacement, and engineering evaluation. As you navigate through your sourcing process, prioritize parametric filtering based on critical specs to ensure compatibility with your existing designs and reduce sourcing risks.

For optimal results, validate lifecycle status and explore alternate-source options before submitting RFQs. This approach will enhance your procurement strategy and ensure that you meet your project requirements effectively.

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Parametric Filter

Transistors - FETs, MOSFETs - Arrays

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