Mfr Part #:

DMC1030UFDBQ-13

Complementary N and P-Channel MOSFET with 12V drain-source breakdown voltage and 5.1A drain current. Features low on-resistance and ESD protected gate.

✓ Total Stock: 21,020 pcs

$ Price Range: $0.26

DMC1030UFDBQ-13 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	21,020 pcs On Request	21020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

DMC1030UFDBQ-13 Description

Short technical summary and product information.

The DMC1030UFDBQ-13 is a complementary N and P-Channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive and general-purpose applications. It is qualified to AEC-Q101, supported by PPAP, and manufactured in IATF 16949 certified facilities. Typical applications include load switches, power management functions, and portable power adaptors.

Electrical characteristics include a minimum drain-source breakdown voltage of 12V for the N-channel and -12V for the P-channel. Maximum drain current is 5.1A for the N-channel and -3.9A for the P-channel at TA=25°C. On-resistance is as low as 34 mΩ for the N-channel at VGS=4.5V and 59 mΩ for the P-channel at VGS=-4.5V. The device features low input capacitance (1003 pF max), low gate charge (23.1 nC max), and a gate threshold voltage of 1V max. ESD protected gate ensures robust operation.

The MOSFET is housed in a U-DFN2020-6 (Type B) surface mount package with a maximum height of 0.6 mm and weight of 0.0065 grams. Terminal finish is NiPdAu. Operating junction temperature range is -55°C to 150°C. The device is RoHS3 compliant, REACH unaffected, MSL Level 1, lead-free, and halogen and antimony free.

DMC1030UFDBQ-13 Quick Information

Product Type: MOSFET Array

Series: DMC1030UFDBQ

Canonical Name: DMC1030UFDBQ-13 Complementary N and P-Channel MOSFET

Subcategory: MOSFET Arrays

DMC1030UFDBQ-13 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1

REACH Status: REACH Unaffected

Lead Free: Lead-Free

DMC1030UFDBQ-13 Estimated Pricing

Qty	Low	High
10,000+	$0.26	$0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMC1030UFDBQ-13 Features

Complementary N and P-Channel MOSFET pair.
Low on-resistance down to 34 mΩ.
ESD protected gate for robust operation.
AEC-Q101 qualified for automotive use.
Ultra-thin 0.6mm profile package.

DMC1030UFDBQ-13 Applications

Ideal for load switch applications.
Used in power management circuits.
Suitable for portable power adaptors.
Designed for automotive electronics.

DMC1030UFDBQ-13 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the package type of the DMC1030UFDBQ-13?

U-DFN2020-6 (Type B) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMC1030UFDBQ-13 RoHS compliant?

Yes, RoHS3 compliant.

What is the drain-source breakdown voltage for the N-channel?

12V minimum.

What is the maximum drain current for the N-channel?

5.1A at TA=25°C.

Is this part qualified for automotive applications?

Yes, AEC-Q101 qualified and PPAP capable.

What is the gate threshold voltage?

1V maximum at ID=250µA.

Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer Name	Diodes Incorporated
AEC Qualified	Yes
Automotive Grade	Yes
Configuration	N and P-Channel Complementary
Current	5.1 A
Drain to Source Voltage (Vdss)	12 V
ESD Protection	Yes
Gate Charge (Qg) (Max) @ Vgs	23.1 nC
Halogen Free	Yes
Height	0.6 mm
Input Capacitance (Ciss) (Max) @ Vds	1003 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power	1.36 W
Rds On (Max) @ Id, Vgs	34 mΩ
Supplier Device Package	U-DFN2020-6 (Type B)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V
Weight	0.0065 g