| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,253 pcs
|
25253 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IPG20N06S4L14AATMA1 is a dual N-channel enhancement mode MOSFET from Infineon's OptiMOS-T2 family. It features a logic level gate, allowing direct drive from low-voltage logic circuits. The device is rated for a maximum drain-source voltage of 60V and a continuous drain current of 20A per channel at 25°C case temperature.
Key electrical characteristics include a typical on-state resistance of 11.6 mΩ at VGS=10V and 16 mΩ at VGS=4.5V, with maximum values of 13.7 mΩ and 20 mΩ respectively. The gate threshold voltage ranges from 1.2V to 2.2V, and the device can handle pulsed drain currents up to 80A. Avalanche energy rating is 90 mJ at 10A, and the device is 100% avalanche tested.
The MOSFET is qualified to AEC-Q101, making it suitable for automotive applications. It operates over a junction temperature range of -55°C to 175°C and is rated for a maximum power dissipation of 50W per channel. The package is an 8-PowerVDFN with wettable flanks, which supports automatic optical inspection (AOI) during manufacturing.
The device is RoHS compliant and has an MSL rating of 1, allowing unlimited floor life before reflow soldering. The thermal resistance from junction to case is 3 K/W, and from junction to ambient is 100 K/W with minimal footprint or 60 K/W with a 6 cm² cooling area.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.21 | $2.21 |
| 10+ | $1.43 | $1.43 |
| 100+ | $0.98 | $0.98 |
| 500+ | $0.79 | $0.79 |
| 1,000+ | $0.71 | $0.71 |
| 2,500+ | $0.69 | $0.69 |
| 5,000+ | $0.66 | $0.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 20A per channel at TC=25°C with VGS=10V.
The operating junction temperature range is -55°C to 175°C.
Yes, the device is RoHS compliant (Green Product) per the datasheet.
The device is available in an 8-PowerVDFN package with supplier device package PG-TDSON-8-10.
The typical on-state resistance is 11.6 mΩ and the maximum is 13.7 mΩ at VGS=10V and ID=17A.
Yes, the IPG20N06S4L14AATMA1 is AEC-Q101 qualified.