| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,000 pcs
|
21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The NVMJD015N06CLTWG is a Dual N-Channel Power MOSFET manufactured by ON Semiconductor. This device features a small footprint (5x6 mm) suitable for compact designs and is AEC-Q101 qualified and PPAP capable.
Key electrical characteristics include a drain-to-source voltage (Vdss) of 60V, a maximum on-resistance (Rds(on)) of 14.4mOhm at 17A and 10V, and a gate charge (Qg) of 9.4nC at 10V. It can handle continuous drain currents of up to 35A at 25°C case temperature and 10.1A at 25°C ambient temperature.
Thermal performance is supported by a junction-to-case thermal resistance of 4.06°C/W and a junction-to-ambient thermal resistance of 49°C/W. The device operates within a temperature range of -55°C to +175°C.
Packaged in an 8-LFPAK, the NVMJD015N06CLTWG is designed for surface mounting. It is Pb-Free and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The Rds(on) is a maximum of 14.4mOhm at 17A and 10V.
The continuous drain current is 35A at 25°C case temperature and 10.1A at 25°C ambient temperature.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-LFPAK package for surface mounting.