| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Technology |
The DMN2036UCB4-7 is a dual N-channel enhancement mode field effect transistor (MOSFET) from Diodes Incorporated. It features a common drain configuration with two N-channel MOSFETs in a single X2-WLB1616-4 package. The device is rated for a drain-to-source voltage of 24V and can deliver 5A of continuous drain current at 25°C, with pulsed drain current capability up to 30A.
The MOSFET operates with a gate threshold voltage between 0.5V and 1.3V, and a maximum gate charge of 12.6nC at VGS=4.5V, enabling efficient switching in low-voltage power management circuits. Maximum power dissipation is 1.45W at 25°C ambient, with junction-to-ambient thermal resistance of 86.68°C/W. Suited for battery management, load switching, and battery protection applications.
The device is supplied in a surface-mount X2-WLB1616-4 (4-XFBGA, WLBGA) package, with terminal material SnAgCu ball. It is totally lead-free, halogen and antimony free, and compliant with RoHS3. The moisture sensitivity level is 1 per J-STD-020, allowing unlimited floor life. Standard packaging is tape and reel with 3000 units per reel.
24V.
5A at TA = +25°C.
-55°C to +150°C (junction temperature).
Yes, RoHS3 compliant and totally lead-free per datasheet.
36mΩ maximum at VGS = 4.5V.
0.5V to 1.3V.
X2-WLB1616-4 (4-XFBGA, WLBGA) surface-mount package.