| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,500 pcs
|
22500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVMFWD030N06CT1G from ON Semiconductor is a dual N-channel MOSFET featuring a 60V drain-to-source voltage (Vdss). This component is designed for surface mount applications and comes in an 8-PowerTDFN package, specifically the 8-DFN (5x6) Dual Flag (SO8FL-Dual) configuration.
Key electrical specifications include a maximum on-state resistance (Rds On) of 29.7mOhm at 3A and 10V, and a continuous drain current of 7A (Ta) or 19A (Tc). The gate threshold voltage (Vgs(th)) is a maximum of 4V at 13µA, with a maximum gate charge (Qg) of 4.7nC at 10V. Input capacitance (Ciss) is rated at 255pF maximum at 30V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It has a maximum power dissipation of 3.2W (Ta) and 23W (Tc). The device is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NVMFWD030N06CT1G is 60V.
The maximum continuous drain current is 7A (Ta) or 19A (Tc).
The Rds On (Max) is 29.7mOhm at 3A, 10V.
The operating temperature range is -55°C to 175°C (TJ).
The NVMFWD030N06CT1G is in an 8-PowerTDFN package, specifically the 8-DFN (5x6) Dual Flag (SO8FL-Dual) supplier device package.