| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVMJD012N06CLTWG from On Semiconductor is a Dual N-Channel MOSFET designed for compact and efficient power solutions. It offers a Drain-to-Source Voltage (Vdss) of 60V and a low Rds(on) of 11.9mOhm at 25A and 10V, minimizing conduction losses.
This MOSFET is suitable for applications requiring low driver losses due to its low QG and capacitance. It operates within a temperature range of -55°C to 175°C (TJ) and is available in a Surface Mount package, specifically the 8-LFPAK56 (SOT-1205).
Key electrical characteristics include a continuous drain current of 42A at 25°C case temperature and 11.5A at 25°C ambient temperature. Power dissipation is rated at 42W (Tc) and 3.2W (Ta). The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-to-Source Voltage (Vdss) is 60V.
The Rds On is a maximum of 11.9mOhm at 25A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
It is supplied in the 8-LFPAK package, which is a Surface Mount type.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.