NVMJD012N06CLTWG The On Semiconductor NVMJD012N06CLTWG is a Dual N-Channel MOSFET designed for power applications. It features a 60V Drain-to-Source Voltage and low Rds(on).
Mfr Part #:

NVMJD012N06CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMJD012N06CLTWG is a Dual N-Channel MOSFET designed for power applications. It features a 60V Drain-to-Source Voltage and low Rds(on).
✓ Total Stock: 18,000 pcs
$ Price Range: $0.99

NVMJD012N06CLTWG Available from 1 distributor

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✓ Non-Authorised
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NVMJD012N06CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NVMJD012N06CLTWG Description

Short technical summary and product information.

The NVMJD012N06CLTWG from On Semiconductor is a Dual N-Channel MOSFET designed for compact and efficient power solutions. It offers a Drain-to-Source Voltage (Vdss) of 60V and a low Rds(on) of 11.9mOhm at 25A and 10V, minimizing conduction losses.

 

This MOSFET is suitable for applications requiring low driver losses due to its low QG and capacitance. It operates within a temperature range of -55°C to 175°C (TJ) and is available in a Surface Mount package, specifically the 8-LFPAK56 (SOT-1205).

 

Key electrical characteristics include a continuous drain current of 42A at 25°C case temperature and 11.5A at 25°C ambient temperature. Power dissipation is rated at 42W (Tc) and 3.2W (Ta). The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications.

NVMJD012N06CLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMJD012N06CLTWG Dual N-Channel MOSFET
Subcategory: N-Channel

NVMJD012N06CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMJD012N06CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMJD012N06CLTWG Features

  • 60V Drain-to-Source Voltage rating.
  • Low Rds(on) of 11.9mOhm at 10V.
  • Dual N-Channel MOSFET configuration.
  • Surface Mount 8-LFPAK package.
  • AEC-Q101 Qualified for reliability.

NVMJD012N06CLTWG Applications

  • Efficient power switching applications.
  • Compact design solutions.
  • Automotive power management.
  • Industrial control systems.

NVMJD012N06CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-to-Source Voltage for the NVMJD012N06CLTWG?

The maximum Drain-to-Source Voltage (Vdss) is 60V.

What is the Rds On (Max) for the NVMJD012N06CLTWG?

The Rds On is a maximum of 11.9mOhm at 25A drain current and 10V gate-source voltage.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMJD012N06CLTWG supplied in?

It is supplied in the 8-LFPAK package, which is a Surface Mount type.

Is the NVMJD012N06CLTWG RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMJD012N06CLTWG?

The Moisture Sensitivity Level is 1.

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