| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Nexperia PMDPB55XP,115 is a dual P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It offers a drain-source voltage of 20V and a continuous drain current of up to 3.4A at 25°C. The device features a low on-state resistance of 70mOhm maximum at 3.4A and 4.5V gate-source voltage.
This MOSFET is designed for applications such as charging switches for portable devices, DC/DC converters, small brushless DC motor drives, and power management in battery-driven portables. It comes in a small, leadless, ultra-thin DFN2020-6 (SOT1118) surface-mounted device plastic package measuring 2 x 2 x 0.65 mm, with an exposed drain pad for excellent thermal conduction.
Key electrical characteristics include an input capacitance of 785pF at 10V and a gate charge of 25nC at 5V. The operating temperature range is -55°C to 150°C (TJ). The device is designed with logic level gate capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.96 | $1.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 20V.
The maximum continuous drain current is 3.4A.
The Rds On is a maximum of 70mOhm at 3.4A and 4.5V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a DFN2020-6 package.