| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
34,020 pcs
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34020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN2024UVT-7 is a dual N-Channel enhancement mode MOSFET from Diodes Incorporated, supplied in a TSOT26 surface-mount package. The device is rated for a maximum drain-source voltage of 20V, a gate-source voltage range of ±10V, and a continuous drain current of 7A at 25°C (5A at 70°C). Pulsed drain current is rated at 35A. Maximum on-state resistance is 24mΩ at VGS=4.5V and 28mΩ at VGS=2.5V.
The MOSFET features a gate threshold voltage of 900mV maximum and input capacitance of 647pF. Maximum gate charge at VGS=4.5V is 7.1nC, supporting fast switching. Power dissipation is 1W. The dual common-drain configuration integrates two N-Channel MOSFETs in one package, which can simplify board layout in applications such as backlighting, DC-DC converters, and power management functions.
The device is offered in the TSOT26 case with matte tin annealed terminals. It is RoHS3 compliant, lead-free, and halogen- and antimony-free. Moisture sensitivity level is 1 per J-STD-020. It is intended for surface-mount assembly and is supplied in tape and reel packaging with 3000 units per reel.
The maximum drain-source voltage is 20V.
The device is supplied in a TSOT26 surface-mount package, with supplier device package TSOT-23-6.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is fully RoHS3 compliant, lead-free, and halogen- and antimony-free.
The continuous drain current is 7A at VGS=4.5V and TA=25°C, and 5A at TA=70°C.
Maximum on-resistance is 24mΩ at VGS=4.5V and ID=6.5A; 28mΩ at VGS=2.5V.
The device contains two N-Channel MOSFETs in a dual common-drain configuration.