Mfr Part #:

FDMS1D2N03DSD

Asymmetric dual N-Channel MOSFET from onsemi, rated for 30V drain-source voltage. Features two MOSFETs: Q1 with 70A continuous current and 3.25mOhm Rds(on), Q2 with 164A and 0.97mOhm Rds(on).

✓ Total Stock: 27,910 pcs

$ Price Range: $0.90

FDMS1D2N03DSD Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	27,910 pcs On Request	27910 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDMS1D2N03DSD Description

Short technical summary and product information.

The FDMS1D2N03DSD is an asymmetric dual N-Channel MOSFET from onsemi, housed in a Power Clip 56 package (8-PowerWDFN). It integrates two specialized MOSFETs with an internally connected switch node, designed for optimal placement and routing in synchronous buck converters.

Electrical specifications: Q1 (control MOSFET) has a drain-source voltage rating of 30V, continuous drain current of 70A at Tc=25°C (19A at Ta=25°C), and maximum on-resistance of 3.25mOhm at Vgs=10V, Id=19A. Q2 (SyncFET) offers 164A continuous drain current at Tc=25°C (37A at Ta=25°C) and ultra-low Rds(on) of 0.97mOhm at Vgs=10V, Id=37A. Gate charge is 33nC (Q1) and 117nC (Q2) at Vgs=10V. Input capacitance is 1410pF (Q1) and 4860pF (Q2) at Vds=15V.

Thermal characteristics: operating temperature range -55°C to 150°C. Maximum power dissipation at Tc=25°C is 26W (Q1) and 42W (Q2). The device is surface mountable in an 8-PowerWDFN package (PQFN 5x6). It is RoHS compliant and halogen free.

Applications include computing, communications, and general purpose point-of-load converters where high efficiency and low switching losses are critical.

FDMS1D2N03DSD Quick Information

Product Type: MOSFET Array

Series: PT11N

Canonical Name: FDMS1D2N03DSD — 30V Asymmetric Dual N-Channel MOSFET

Subcategory: Arrays

FDMS1D2N03DSD Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDMS1D2N03DSD Estimated Pricing

Qty	Low	High
3,000+	$0.90	$0.90

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS1D2N03DSD Features

Asymmetric dual N-Channel MOSFET design.
30V drain-source voltage rating.
Low Rds(on) of 0.97 mOhm for Q2.
High continuous drain current up to 164A.
Surface mount 8-PowerWDFN package.

FDMS1D2N03DSD Applications

Ideal for synchronous buck converters.
Used in computing power supplies.
Suitable for telecom point-of-load regulators.
General purpose high-efficiency power conversion.

FDMS1D2N03DSD FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

30V.

What package does the FDMS1D2N03DSD come in?

8-PowerWDFN (Power Clip 56, PQFN 5x6).

What is the operating temperature range?

-55°C to 150°C.

Is the FDMS1D2N03DSD RoHS compliant?

Yes, it is listed as RoHS compliant.

What is the continuous drain current for Q1 and Q2?

Q1: 70A at Tc=25°C, 19A at Ta=25°C; Q2: 164A at Tc=25°C, 37A at Ta=25°C.

What is the on-resistance for each MOSFET?

Q1: 3.25mOhm max at Vgs=10V, Id=19A; Q2: 0.97mOhm max at Vgs=10V, Id=37A.

What is the gate charge for Q1 and Q2?

Q1: 33nC max at Vgs=10V; Q2: 117nC max at Vgs=10V.

Category	Transistors - FETs, MOSFETs - Arrays
Manufacturer Name	On Semiconductor
Configuration	2 N-Channel (Dual) Asymmetrical
Current	19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	33 nC
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1410 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power	26 W
Rds On (Max) @ Id, Vgs	3.25 mOhm
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	8-PQFN (5x6)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V