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DMN2991UDJ-7A Dual N-Channel Enhancement Mode MOSFET from Diodes Incorporated. Features 20V Vds, 520mA Id, low RDS(on) of 990mΩ at 4.5V gate drive, and ultra-small SOT-963 package.
Mfr Part #:

DMN2991UDJ-7A

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel Enhancement Mode MOSFET from Diodes Incorporated. Features 20V Vds, 520mA Id, low RDS(on) of 990mΩ at 4.5V gate drive, and ultra-small SOT-963 package.
✓ Total Stock: 31,020 pcs

DMN2991UDJ-7A Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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31,020 pcs
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DMN2991UDJ-7A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs(th) (Max) @ Id
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DMN2991UDJ-7A Description

Short technical summary and product information.

The DMN2991UDJ-7A is a dual N-channel enhancement mode MOSFET from Diodes Incorporated designed to minimize on-state resistance while maintaining superior switching performance. It is ideal for high-efficiency power management applications such as DC-DC converters and analog switches.

 

Key electrical specifications include a maximum drain-source voltage of 20V, continuous drain current of 520mA at 25°C, and a maximum RDS(on) of 990mΩ at Vgs=4.5V and Id=100mA. The low gate threshold voltage of 1V max enables operation from low-voltage logic levels. Input capacitance is only 21.5pF, contributing to fast switching speeds and reduced gate drive losses.

 

The MOSFET is housed in an ultra-small SOT-963 surface mount package with a low profile of 0.45mm maximum height and weight of 0.027 grams. It operates over a wide junction temperature range from -55°C to +150°C. The device is totally lead-free, RoHS3 compliant, and halogen-free, supporting environmentally conscious designs.

DMN2991UDJ-7A Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel Enhancement Mode MOSFET, 20V, 520mA, SOT-963
Subcategory: MOSFET Arrays

DMN2991UDJ-7A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN2991UDJ-7A Features

  • Dual N-channel enhancement mode MOSFET design.
  • Maximum drain-source voltage of 20V.
  • Continuous drain current up to 520mA.
  • Low on-resistance of 990mΩ at 4.5V.
  • Ultra-small SOT-963 surface mount package.

DMN2991UDJ-7A Applications

  • Ideal for DC-DC converter power stages.
  • Use in general purpose interfacing switches.
  • Suitable for power management functions.
  • Works in analog switch circuits.
  • Compatible with low-voltage logic levels.

DMN2991UDJ-7A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of DMN2991UDJ-7A?

The package is SOT-963.

What is the operating temperature range?

-55°C to +150°C (junction temperature).

Is the DMN2991UDJ-7A RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum drain-source voltage?

20V.

What is the maximum continuous drain current?

520 mA at 25°C ambient.

What is the maximum gate threshold voltage?

1V at Id=250µA.

What is the maximum on-resistance at 4.5V gate drive?

990mΩ at Vgs=4.5V and Id=100mA.

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