CSD75207W15
Texas Instruments
Dual P-channel MOSFET with 20V drain-source voltage, 3.9A drain current, and low on-resistance of 27mΩ at 4.5V. Housed in a compact 9-DSBGA package.
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28,500 pcs
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28500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The NVMFD5C668NLWFT1G from On Semiconductor is a power MOSFET designed for efficient power management applications. This N-channel dual MOSFET features a maximum drain-source voltage of 60V and a low on-resistance of 6.5 mΩ at a gate-source voltage of 10V, minimizing conduction losses.
With a continuous drain current rating of 68A at 25°C case temperature, this device is suitable for high-power applications. It also boasts a pulsed drain current of 454A and a maximum power dissipation of 57.5W at 25°C case temperature. The operating junction and storage temperature range is from -55°C to +175°C.
The MOSFET is housed in a compact DFN8 5x6 (SO8FL) package, designed for surface mounting. Its wettable flank option enhances optical inspection, making it suitable for automated manufacturing processes. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. It is also Pb-free and RoHS compliant.
Key electrical characteristics include a gate-to-source voltage range of ±20V and a leakage current of 100 nA. The thermal resistance from junction-to-case is 2.6 °C/W, and junction-to-ambient is 50.26 °C/W when mounted on a standard FR4 board.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 60V.
The maximum on-resistance at VGS = 10V is 6.5 mΩ.
The continuous drain current at 25°C case temperature is 68A.
The package type is DFN8 5x6 (SO8FL).
The device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.
