| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,964,872 pcs
|
4964872 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
133,926 pcs
|
133926 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,537 pcs
|
2537 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The CSD75207W15 is a dual P-channel NexFET power MOSFET from Texas Instruments. It features a common source configuration with two P-channel MOSFETs in a single package. Key electrical specifications include a drain-source voltage (VDS) of -20V, a gate-source voltage (VGS) of -6V, and a continuous drain current (ID) of 3.9A at 25°C. The device offers low on-resistance: 27mΩ maximum at VGS=4.5V, 39mΩ at VGS=2.5V, and 162mΩ at VGS=1.8V. Gate charge is typically 2.9nC at VGS=4.5V, with gate-drain charge of 0.4nC and gate-source charge of 0.7nC. Input capacitance is 595pF maximum at VDS=10V. The threshold voltage is typically -0.8V (maximum 1.1V absolute at ID=250µA). The device includes gate ESD protection greater than 4kV HBM. It is designed for battery-operated space-constrained applications due to its small footprint and low profile. The package is a 9-UFBGA/DSBGA (9-DSBGA) with dimensions 1.5mm x 1.5mm and area 3.0625mm². Mounting type is surface mount. Operating temperature range is -55°C to 150°C. The device is RoHS compliant, halogen free, and lead free. It is rated for catalog applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.08 | $1.08 |
| 10+ | $0.67 | $0.67 |
| 100+ | $0.44 | $0.44 |
| 500+ | $0.34 | $0.34 |
| 1,000+ | $0.32 | $0.32 |
| 3,000+ | $0.25 | $0.25 |
| 6,000+ | $0.23 | $0.23 |
| 9,000+ | $0.20 | $0.20 |
| 24,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is -20V.
The device is available in a 9-UFBGA/DSBGA package (9-DSBGA) with dimensions 1.5mm x 1.5mm.
The operating temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant, halogen free, and lead free.
The maximum on-resistance is 27mΩ at VGS=4.5V, 39mΩ at VGS=2.5V, and 162mΩ at VGS=1.8V.
The typical gate charge (Qg) is 2.9nC at VGS=4.5V, with maximum 3.7nC.
It is a dual P-channel MOSFET with common source configuration.