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STS2DPF80 The STMicroelectronics STS2DPF80 is a dual P-Channel MOSFET array designed for power applications. It features an 80V drain-to-source voltage and a continuous drain current of 2A.
Mfr Part #:

STS2DPF80

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STS2DPF80 is a dual P-Channel MOSFET array designed for power applications. It features an 80V drain-to-source voltage and a continuous drain current of 2A.
✓ Total Stock: 31,332 pcs
$ Price Range: $1.64

STS2DPF80 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
31,332 pcs
On Request
31332 pcs On Request 1 On Request On Request 2006 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STS2DPF80 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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STS2DPF80 Description

Short technical summary and product information.

The STMicroelectronics STS2DPF80 is a dual P-Channel MOSFET array housed in an 8-SOIC package. This device offers a drain-to-source voltage (Vdss) of 80V and can handle a continuous drain current (Id) of 2A. Its surface mount configuration makes it suitable for various electronic designs.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 250mOhm at 1A and 10V, and a gate charge (Qg) of 20nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and it features a logic-level gate for compatibility with lower voltage control signals. The input capacitance (Ciss) is 739pF at 25V.

 

With a power dissipation rating of 2.5W and an operating junction temperature up to 150°C, the STS2DPF80 is designed for reliable performance in demanding environments. The MOSFET technology ensures efficient switching and power control.

 

This component is suitable for applications requiring dual P-channel MOSFET functionality in a compact surface-mount package. Its specifications make it a versatile choice for power management circuits, load switching, and other general-purpose power control tasks.

STS2DPF80 Quick Information

Product Type: MOSFET Array
Canonical Name: STMicroelectronics STS2DPF80 Dual P-Channel MOSFET
Subcategory: MOSFET Arrays

STS2DPF80 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STS2DPF80 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

STS2DPF80 Features

  • Dual P-Channel MOSFET array.
  • 80V drain-to-source voltage rating.
  • 2A continuous drain current.
  • Surface mount 8-SOIC package.
  • Logic level gate feature.

STS2DPF80 Applications

  • Ideal for load switching circuits.
  • Used in power management systems.
  • Suitable for battery protection.
  • Works in DC-DC converter applications.
  • Applied in motor control circuits.

STS2DPF80 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STS2DPF80?

80V.

What is the package type of the STS2DPF80?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating junction temperature range?

Maximum 150°C (TJ).

What is the MOSFET configuration?

2 P-Channel (Dual).

What is the continuous drain current rating?

2A.

What is the gate threshold voltage?

Maximum 4V at 250µA.

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