FDMA1023PZ-F106

The FDMA1023PZ-F106 is a dual P-channel MOSFET array from ON Semiconductor, designed for battery charge switch applications in portable devices. It integrates two independent P-channel MOSFETs in a common source configuration, enabling bidirectional current flow. Key electrical specifications include a maximum drain-source voltage of -20V, continuous drain current of -3.7A (at Ta=25°C), and pulsed drain current of -6A. The device offers low on-resistance: 72mΩ at Vgs=-4.5V, 95mΩ at Vgs=-2.5V, 130mΩ at Vgs=-1.8V, and 195mΩ at Vgs=-1.5V. Gate threshold voltage is 1V max at Id=-250µA. Input capacitance is 655pF at Vds=-10V, and total gate charge is 12nC at Vgs=-4.5V. The device is housed in a 6-VDFN exposed pad package (MicroFET 2x2) with surface mount mounting. It is RoHS compliant, halogen-free, and Pb-free. The package offers excellent thermal performance with junction-to-ambient thermal resistance as low as 86°C/W (single operation, Note 1a). Operating junction temperature range is -55°C to 150°C. ESD protection level is >2kV (HBM). This MOSFET is suitable for battery charge switching, load switching, and other low-voltage power management applications in cellular handsets and ultra-portable devices.