FDMS001N025DSD Asymmetric dual N-Channel MOSFET from On Semiconductor. Rated for 25V drain-source, with Q1 control MOSFET capable of 69A and Q2 syncFET at 165A continuous current.
Mfr Part #:

FDMS001N025DSD

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Asymmetric dual N-Channel MOSFET from On Semiconductor. Rated for 25V drain-source, with Q1 control MOSFET capable of 69A and Q2 syncFET at 165A continuous current.
✓ Total Stock: 34,954 pcs

FDMS001N025DSD Available from 1 distributor

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FDMS001N025DSD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDMS001N025DSD Description

Short technical summary and product information.

The FDMS001N025DSD is an asymmetric dual N-Channel MOSFET from On Semiconductor, designed in a PowerTrench Power Clip package for optimized synchronous buck converter layouts. The device integrates a control MOSFET (Q1) and a SyncFET (Q2) with internally connected switch nodes for reduced circuit inductance.

 

Key electrical characteristics include a maximum drain-source voltage of 25V. Q1 delivers up to 69A continuous drain current at case temperature 25°C (19A at ambient) with a maximum Rds(on) of 3.25 mOhm at Vgs=10V and 4 mOhm at Vgs=4.5V. Q2 provides up to 165A continuous (38A at ambient) with an ultra-low Rds(on) of 0.92 mOhm at Vgs=10V and 1.2 mOhm at Vgs=4.5V. Gate charge is 30nC for Q1 and 104nC for Q2, enabling efficient high-frequency switching.

 

The device is housed in an 8-PowerWDFN surface mount package (8-PQFN 5x6mm) and operates over a junction temperature range of -55°C to +150°C. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. Typical applications include computing, communications, and general point-of-load power supplies.

FDMS001N025DSD Quick Information

Product Type: Asymmetric Dual N-Channel MOSFET Array
Series: PowerTrench
Canonical Name: FDMS001N025DSD Asymmetric Dual N-Channel MOSFET, 25V, 69A/165A
Subcategory: Dual N-Channel MOSFET

FDMS001N025DSD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDMS001N025DSD Features

  • Asymmetric dual N-Channel MOSFET design for synchronous buck converters.
  • Q1 control MOSFET with 3.25 mOhm maximum Rds(on) at 10V.
  • Q2 SyncFET with 0.92 mOhm maximum Rds(on) at 10V.
  • Continuous drain current up to 69A (Q1) and 165A (Q2) at Tc.
  • Surface mount 8-PowerWDFN (5x6 mm) package.

FDMS001N025DSD Applications

  • Ideal for synchronous buck converter topologies.
  • Suitable for computing and communications power supplies.
  • Used in general point-of-load voltage regulators.

FDMS001N025DSD FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMS001N025DSD?

The maximum drain-source voltage is 25V.

What is the package type of the FDMS001N025DSD?

It comes in an 8-PowerWDFN surface mount package, also known as 8-PQFN (5x6mm).

What is the operating temperature range of the FDMS001N025DSD?

The operating junction temperature range is -55°C to +150°C.

Is the FDMS001N025DSD RoHS compliant?

Yes, it is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.

What are the gate charge values for Q1 and Q2?

Q1 has a maximum gate charge of 30 nC and Q2 has 104 nC at Vgs=10V.

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