| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,883 pcs
|
21883 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The AON5820 is a 20V common-drain dual N-channel MOSFET manufactured by Alpha & Omega Semiconductor using advanced trench technology. It provides excellent RDS(ON) performance with low gate charge and can operate with gate voltages as low as 2.5V while retaining a 12V VGS maximum rating. The device is ESD protected to HBM Class 2.
Key specifications include a drain-source voltage (VDS) of 20V, continuous drain current (ID) of 10A at 25°C (8A at 70°C), and pulsed drain current of 85A. The static drain-source on-resistance is typically 5.5mΩ at VGS=4.5V and ID=10A. The gate threshold voltage ranges from 0.3V to 1.0V.
The common-drain configuration makes this MOSFET suitable for use as a uni-directional or bi-directional load switch. It is packaged in a DFN 2x5 (6-pin) surface-mount package. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 1.7W at 25°C.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
DFN 2x5 (6-pin).
-55°C to 150°C.
10A at 25°C, 8A at 70°C.
0.3V to 1.0V.
Yes, HBM Class 2.