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NVMD6P02R2G The NVMD6P02R2G is a Dual P-Channel MOSFET from On Semiconductor. It features a 20V drain-source voltage and 4.8A continuous drain current.
Mfr Part #:

NVMD6P02R2G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMD6P02R2G is a Dual P-Channel MOSFET from On Semiconductor. It features a 20V drain-source voltage and 4.8A continuous drain current.
✓ Total Stock: 20,000 pcs
$ Price Range: $0.99

NVMD6P02R2G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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20,000 pcs
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20000 pcs On Request 1 On Request On Request On Request On Request On Request
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NVMD6P02R2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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NVMD6P02R2G Description

Short technical summary and product information.

The NVMD6P02R2G is a Dual P-Channel MOSFET manufactured by On Semiconductor. This component is designed for surface mount applications and comes in an 8-SOIC package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (ID) of 4.8A. The Rds On is specified at a maximum of 33mOhm at 6.2A and 4.5V. Input capacitance (Ciss) is 1700pF at 16V, and gate charge (Qg) is a maximum of 35nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 250µA. The device has a maximum power dissipation of 750mW.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and features a Logic Level Gate. Its configuration consists of two P-Channel MOSFETs in a dual arrangement. The component is suitable for various electronic designs requiring efficient switching and power management.

NVMD6P02R2G Quick Information

Product Type: MOSFET
Series: NVMD6P02R2G
Canonical Name: NVMD6P02R2G Dual P-Channel MOSFET
Subcategory: Dual P-Channel

NVMD6P02R2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMD6P02R2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMD6P02R2G Features

  • Dual P-Channel MOSFET configuration.
  • 20V drain-to-source voltage rating.
  • 4.8A continuous drain current.
  • 33mOhm maximum Rds On.
  • Surface mount 8-SOIC package.

NVMD6P02R2G Applications

  • Ideal for power switching circuits.
  • Suitable for battery management systems.
  • Used in load switch applications.
  • Applicable in low-voltage motor control.

NVMD6P02R2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NVMD6P02R2G?

The drain-to-source voltage (Vdss) for the NVMD6P02R2G is 20V.

What is the continuous drain current (ID) of the NVMD6P02R2G?

The continuous drain current (ID) of the NVMD6P02R2G is 4.8A.

What is the Rds On (Max) for the NVMD6P02R2G?

The Rds On (Max) for the NVMD6P02R2G is 33mOhm at 6.2A and 4.5V.

What package does the NVMD6P02R2G come in?

The NVMD6P02R2G comes in an 8-SOIC package.

Is the NVMD6P02R2G RoHS compliant?

The NVMD6P02R2G is RoHS3 Compliant.

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