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NVMFD6H840NLWFT1G The onsemi NVMFD6H840NLWFT1G is a Dual N-Channel MOSFET with a drain-source breakdown voltage of 80V. It features a low on-resistance of 6.9mOhm and a continuous drain current of up to 74A.
Mfr Part #:

NVMFD6H840NLWFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The onsemi NVMFD6H840NLWFT1G is a Dual N-Channel MOSFET with a drain-source breakdown voltage of 80V. It features a low on-resistance of 6.9mOhm and a continuous drain current of up to 74A.
✓ Total Stock: 15,800 pcs
$ Price Range: $0.99

NVMFD6H840NLWFT1G Available from 1 distributor

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NVMFD6H840NLWFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
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NVMFD6H840NLWFT1G Description

Short technical summary and product information.

The NVMFD6H840NLWFT1G from onsemi is a Dual N-Channel MOSFET designed for power applications. It offers a high drain-source breakdown voltage of 80V and a low on-resistance of 6.9mOhm at 20A and 10V gate-source voltage. The device can handle a continuous drain current of up to 74A (Tc) or 14A (Ta).

 

This MOSFET is suitable for surface mount applications, utilizing an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) configuration. It operates within a temperature range of -55°C to 175°C (TJ). Key electrical parameters include an input capacitance of 2002pF at 40V and a gate charge of 32nC at 10V. The gate threshold voltage is 2V at 96µA.

 

This component is classified as a MOSFET array, providing two N-Channel MOSFETs in a single package. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor principles.

NVMFD6H840NLWFT1G Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel MOSFET
Subcategory: MOSFET

NVMFD6H840NLWFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFD6H840NLWFT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFD6H840NLWFT1G Features

  • 80V drain-source breakdown voltage.
  • Low 6.9mOhm on-resistance.
  • High continuous drain current.
  • Dual N-Channel MOSFET configuration.
  • Surface mount 8-PowerTDFN package.

NVMFD6H840NLWFT1G Applications

  • Suitable for power switching applications.
  • Ideal for high-current designs.
  • Efficient in voltage regulation circuits.
  • Used in power management systems.

NVMFD6H840NLWFT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVMFD6H840NLWFT1G?

The maximum drain-source voltage is 80V.

What is the continuous drain current rating?

The continuous drain current is 74A at the case temperature and 14A at the ambient temperature.

What is the on-resistance of this MOSFET?

The on-resistance is 6.9mOhm when measured at 20A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the NVMFD6H840NLWFT1G in?

It is in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) configuration.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

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