| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 1514+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Technology |
The EFC4618R-P-TR is a dual N-channel MOSFET array from On Semiconductor. It features a common drain configuration with logic level gate capable of 2.5V drive. The device offers a maximum gate charge of 25.4 nC at Vgs = 4.5V and is rated for power dissipation up to 1.6 W. It operates at a maximum junction temperature of 150°C.
This MOSFET array is housed in a compact 4-XFBGA, FCBGA package with supplier device package EFCP1818-4CC-037, designed for surface mount assembly. The dual common drain layout makes it suitable for applications requiring two independent N-channel switches in a single package.
Typical applications include load switching, battery protection, and power management in portable electronics. The logic level gate threshold allows direct drive from low-voltage logic circuits, simplifying interface design.
| Qty | Low | High |
|---|---|---|
| 1,212+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The package is 4-XFBGA, FCBGA with supplier device package EFCP1818-4CC-037.
The maximum junction temperature is 150°C.
It is listed as RoHS3 Compliant, but this status is unverified.
The maximum gate charge is 25.4 nC at Vgs = 4.5V.
It is a 2 N-Channel (Dual) Common Drain configuration.
It features a Logic Level Gate with 2.5V drive capability.
The power dissipation is 1.6 W.