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NVMFWD020N06CT1G The NVMFWD020N06CT1G is a dual N-channel MOSFET from ON Semiconductor. It features a 60V drain-source voltage and Surface Mount packaging.
Mfr Part #:

NVMFWD020N06CT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMFWD020N06CT1G is a dual N-channel MOSFET from ON Semiconductor. It features a 60V drain-source voltage and Surface Mount packaging.
✓ Total Stock: 16,500 pcs
$ Price Range: $0.99

NVMFWD020N06CT1G Available from 1 distributor

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✓ Non-Authorised
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16,500 pcs
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NVMFWD020N06CT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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NVMFWD020N06CT1G Description

Short technical summary and product information.

The NVMFWD020N06CT1G is a dual N-channel MOSFET manufactured by ON Semiconductor. This device offers a drain-source voltage (Vdss) of 60V and a low on-resistance (Rds On) of 20.3mOhm at a drain current (Id) of 4A and gate-source voltage (Vgs) of 10V. It operates within a temperature range of -55°C to 175°C (TJ).

 

Designed for surface mounting, the MOSFET comes in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) configuration. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The component is rated for a continuous current of 8A at ambient temperature (Ta) and 27A at case temperature (Tc), with a power dissipation of 3.1W (Ta) and 31W (Tc).

 

Key electrical characteristics include an input capacitance (Ciss) of 355pF at 30V and a gate charge (Qg) of 5.8nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 20µA. This MOSFET is suitable for various power management applications requiring efficient switching and low conduction losses.

NVMFWD020N06CT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMFWD020N06CT1G Dual N-Channel MOSFET
Subcategory: Dual N-Channel

NVMFWD020N06CT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFWD020N06CT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWD020N06CT1G Features

  • Dual N-Channel MOSFET technology.
  • 60V drain-source voltage rating.
  • Low 20.3mOhm on-resistance.
  • Surface mount 8-PowerTDFN package.
  • Wide -55°C to 175°C operating temperature.

NVMFWD020N06CT1G Applications

  • Power switching applications.
  • Efficient power management circuits.
  • Automotive power systems.
  • Industrial control modules.

NVMFWD020N06CT1G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NVMFWD020N06CT1G?

The drain-source voltage (Vdss) is 60V.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 20.3mOhm at 4A drain current and 10V gate-source voltage.

What is the operating temperature range for the NVMFWD020N06CT1G?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NVMFWD020N06CT1G in?

It is in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) configuration, for surface mounting.

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