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SP8M8FD5TB1 The ROHM Semiconductor SP8M8FD5TB1 is a MOSFET array with N and P-channel configuration. It operates at 30V and handles up to 6A continuous drain current.
Mfr Part #:

SP8M8FD5TB1

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor SP8M8FD5TB1 is a MOSFET array with N and P-channel configuration. It operates at 30V and handles up to 6A continuous drain current.
✓ Total Stock: 20,190 pcs
$ Price Range: $1.64

SP8M8FD5TB1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
20,190 pcs
On Request
20190 pcs On Request 1 On Request On Request 1344+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SP8M8FD5TB1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SP8M8FD5TB1 Description

Short technical summary and product information.

The ROHM Semiconductor SP8M8FD5TB1 is a versatile MOSFET array featuring both N-channel and P-channel transistors within a single package. This device is designed for applications requiring a 30V drain-to-source voltage and can handle a continuous drain current of up to 6A at 25°C. Its low on-resistance, with values as low as 30mOhm at 6A and 10V Vgs, ensures efficient power transfer.

 

The SP8M8FD5TB1 is built using Metal Oxide Semiconductor (MOS) technology and offers logic-level gate drive capability, requiring only 4V for operation. It is housed in a standard 8-SOP surface-mount package, making it suitable for automated assembly processes. The operating temperature range extends up to 150°C, providing robustness for demanding environments.

 

Key electrical characteristics include input capacitance up to 520pF and gate charge up to 7.2nC, which are important parameters for switching performance. The threshold voltage is specified at 2.5V at 1mA. This component is ideal for various power management and switching applications where space and efficiency are critical.

SP8M8FD5TB1 Quick Information

Product Type: MOSFET Array
Canonical Name: SP8M8FD5TB1 N and P-Channel MOSFET
Subcategory: FET, MOSFET Arrays

SP8M8FD5TB1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SP8M8FD5TB1 Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SP8M8FD5TB1 Features

  • N and P-Channel MOSFET array configuration.
  • 30V drain-to-source voltage rating.
  • 6A continuous drain current capability.
  • Low Rds On: 30mOhm at 6A, 10V.
  • Logic level gate drive, 4V operation.

SP8M8FD5TB1 Applications

  • Suitable for power switching circuits.
  • Ideal for battery management systems.
  • Used in DC-DC converters.
  • Applicable for load switching.

SP8M8FD5TB1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SP8M8FD5TB1?

30V.

What package is the SP8M8FD5TB1 available in?

8-SOIC (0.154", 3.90mm Width) with supplier device package 8-SOP.

What is the maximum operating temperature of the SP8M8FD5TB1?

150°C.

What is the maximum on-resistance at 10V gate drive?

30mOhm at 6A for the N-channel and 56mOhm at 4.5A for the P-channel.

What is the gate charge of the SP8M8FD5TB1?

7.2nC to 8.5nC at 5V.

What is the input capacitance of the SP8M8FD5TB1?

520pF to 850pF at 10V.

What is the gate threshold voltage of the SP8M8FD5TB1?

Maximum 2.5V at 1mA.

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