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FDS6892A MOSFET 2N-CH 20V 7.5A 8SOIC, dual N-channel, surface mount, logic level gate.
Mfr Part #:

FDS6892A

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
MOSFET 2N-CH 20V 7.5A 8SOIC, dual N-channel, surface mount, logic level gate.
✓ Total Stock: 18,355 pcs
$ Price Range: $0.25

FDS6892A Available from 5 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDS6892A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDS6892A Description

Short technical summary and product information.

The FDS6892A is a dual N-channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for low voltage power switching applications and features a logic level gate for direct drive from low voltage logic circuits. The device offers a maximum drain-source voltage of 20V and a continuous drain current of 7.5A. On-resistance is typically 18mOhm maximum at Vgs=4.5V and Id=7.5A, ensuring efficient power handling. With a gate charge of 17nC and input capacitance of 1333pF, the device is suitable for high-frequency switching. The maximum power dissipation is 900mW. The MOSFET is housed in a surface-mount 8-SOIC package (0.154" width, 3.90mm body width) and operates over a junction temperature range of -55°C to 150°C. The dual N-channel configuration allows for compact designs in circuits requiring two matched MOSFETs, such as synchronous rectification, load switching, and DC-DC converters. The part is RoHS3 compliant (unverified) and has an MSL of level 1 (unlimited).

FDS6892A Quick Information

Product Type: MOSFET Array
Canonical Name: MOSFET 2N-CH 20V 7.5A 8SOIC
Subcategory: Arrays

FDS6892A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDS6892A Estimated Pricing

Qty Low High
2,435+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDS6892A Features

  • Dual N-channel MOSFET in 8-SOIC package.
  • Rated for 20V drain-source voltage.
  • Maximum continuous drain current of 7.5A.
  • Low on-resistance of 18mOhm at 4.5V gate drive.
  • Logic level gate threshold of 1.5V.

FDS6892A Applications

  • Used in low voltage power management circuits.
  • Ideal for load switching in portable devices.
  • Suitable for DC-DC converter applications.
  • Can be used in battery protection circuits.

FDS6892A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V

What is the package type?

8-SOIC (0.154", 3.90mm Width)

What is the operating temperature range?

-55°C to 150°C (junction)

Is this device RoHS compliant?

RoHS3 Compliant (unverified)

What is the continuous drain current rating?

7.5A

What is the gate threshold voltage?

1.5V maximum at Id=250µA

What is the on-resistance?

18mOhm maximum at Vgs=4.5V, Id=7.5A

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