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NVMFWD024N06CT1G The NVMFWD024N06CT1G is an N-Channel Power MOSFET from On Semiconductor. It features a 60V drain-source voltage and a low Rds On of 22.6mOhm.
Mfr Part #:

NVMFWD024N06CT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMFWD024N06CT1G is an N-Channel Power MOSFET from On Semiconductor. It features a 60V drain-source voltage and a low Rds On of 22.6mOhm.
✓ Total Stock: 27,000 pcs
$ Price Range: $0.99

NVMFWD024N06CT1G Available from 1 distributor

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NVMFWD024N06CT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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NVMFWD024N06CT1G Description

Short technical summary and product information.

The NVMFWD024N06CT1G is an N-Channel Power MOSFET manufactured by On Semiconductor. This device is designed for power switching applications, offering a drain-to-source voltage (Vdss) of 60V.

 

Key electrical characteristics include a low on-resistance (Rds On) of 22.6mOhm at 3A and 10V Vgs, and a maximum gate charge (Qg) of 5.7nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 20µA. It can handle a continuous drain current of 8A at ambient temperature (Ta) and 24A at case temperature (Tc), with a power dissipation of 3.1W (Ta) and 28W (Tc).

 

The MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) configuration, designed for surface mounting.

 

Compliance information indicates RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH unaffected status. These specifications make the NVMFWD024N06CT1G suitable for various power management designs.

NVMFWD024N06CT1G Quick Information

Product Type: Power MOSFET
Canonical Name: NVMFWD024N06CT1G Power MOSFET, N-Channel, DUAL SO8FL
Subcategory: N-Channel

NVMFWD024N06CT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMFWD024N06CT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFWD024N06CT1G Features

  • 60V drain-source voltage rating.
  • Low 22.6mOhm Rds On at 3A, 10V.
  • High 24A continuous current rating.
  • Surface mountable 8-PowerTDFN package.
  • Operates from -55°C to 175°C.

NVMFWD024N06CT1G Applications

  • Suitable for power switching circuits.
  • Ideal for power management designs.
  • Used in applications requiring high current.
  • Compact SO8FL-Dual package integration.

NVMFWD024N06CT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the NVMFWD024N06CT1G?

The drain-source voltage (Vdss) is 60V.

What is the Rds On for the NVMFWD024N06CT1G?

The Rds On is a maximum of 22.6mOhm at 3A and 10V Vgs.

What is the continuous current rating of the NVMFWD024N06CT1G?

The continuous current rating is 8A at ambient temperature and 24A at case temperature.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NVMFWD024N06CT1G in?

It is in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) for surface mounting.

Is the NVMFWD024N06CT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

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