NVMFD5873NLT1G The NVMFD5873NLT1G is a dual N-channel MOSFET from ON Semiconductor. It features a 60V drain-to-source voltage and a low Rds(on) of 13mOhm.
Mfr Part #:

NVMFD5873NLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMFD5873NLT1G is a dual N-channel MOSFET from ON Semiconductor. It features a 60V drain-to-source voltage and a low Rds(on) of 13mOhm.
✓ Total Stock: 20,754 pcs
$ Price Range: $0.99

NVMFD5873NLT1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
20,754 pcs
20754 pcs On Request 1 On Request On Request 19+ On Request On Request

NVMFD5873NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NVMFD5873NLT1G Description

Short technical summary and product information.

The NVMFD5873NLT1G is a power MOSFET from ON Semiconductor, designed for compact applications. This dual N-channel device offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current of up to 10A. Its low on-resistance (Rds(on)) of 13mOhm at 15A and 10V gate-source voltage minimizes conduction losses.

 

The MOSFET operates with a logic-level gate, making it suitable for direct drive from microcontrollers. It features a small footprint SO-8FL (Dual Flag) package, measuring 5x6 mm, which is surface mountable. The operating temperature range is -55°C to 175°C.

 

Key electrical characteristics include an input capacitance of 1560pF at 25V and a gate charge of 30.5nC at 10V. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-Free.

 

This MOSFET is designed for applications requiring efficient power switching and minimal driver losses due to its low capacitance. The small package size is ideal for space-constrained designs.

NVMFD5873NLT1G Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel Logic Level MOSFET
Subcategory: N-Channel

NVMFD5873NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMFD5873NLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMFD5873NLT1G Features

  • Dual N-Channel Logic Level MOSFET
  • 60V Drain-to-Source Voltage
  • 10A Continuous Drain Current
  • 13mOhm Rds(on) at 15A, 10V
  • Compact 5x6mm SO8FL Package

NVMFD5873NLT1G Applications

  • Ideal for compact power designs
  • Suitable for microcontroller interfaces
  • Automotive applications
  • Efficient power switching

NVMFD5873NLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMFD5873NLT1G?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current of the NVMFD5873NLT1G at 25°C?

The continuous drain current at 25°C (Tmb) is 58A.

What is the Rds(on) for the NVMFD5873NLT1G?

The Rds(on) is a maximum of 13mOhm at 15A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMFD5873NLT1G in?

It is in an 8-PowerTDFN package, also referred to as 8-DFN (5x6) Dual Flag (SO8FL-Dual).

Is the NVMFD5873NLT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVMFD5873NLT1G?

The Moisture Sensitivity Level is 1.

Home
Account

Categories